Bismuth titanate (Bi4Ti3O12, BIT) sputtering targets from Infinita Materials deliver a lead-free, bismuth-layered Aurivillius-phase oxide prized for its high ferroelectric Curie temperature and strong piezoelectric and pyroelectric response. Supplied as dense, phase-pure ceramic discs at greater than 99.9% purity, these targets support reproducible thin-film deposition for ferroelectric memory, piezoelectric MEMS, and high-frequency dielectric research. Each target is manufactured to controlled Bi: Ti:O stoichiometry and dimensional tolerance for RF and pulsed-DC magnetron sputtering systems.
Answer: Bismuth Titanate sputter target is a high-purity material possessing ferroelectric, piezoelectric, and pyroelectric properties. It is used for sputtering applications in the production of thin films.
Answer: Bismuth Titanate possesses good dielectric characteristics, a high thermal coefficient of dielectric constant, and a high electric field polarization, allowing its use in thin films in memory, sensor, and high-frequency applications.
Answer: Bismuth Titanate is prepared through magnetron sputtering, in which Bi₄Ti₃O₁₂ is ionized by a high-energy plasma, causing atoms to be dispersed as a thin film on a substrate.
Answer: RF magnetron sputtering is typically used because the oxide target has low electrical conductivity at room temperature; pulsed-DC sputtering is also used with appropriately bonded targets for higher deposition rates.
Defines the Aurivillius-phase Bi: Ti:O stoichiometry of the target material
CAS number
12010-77-4
Unique substance identifier used for procurement, safety, and regulatory documentation
Molar mass
~1171.52 g/mol
Basis for stoichiometric process calculations and film thickness/deposition-rate modelling
Crystal structure
Orthorhombic Aurivillius phase (pseudo-tetragonal above the Curie point)
Governs the layered perovskite/fluorite stacking responsible for anisotropic ferroelectricity
Density (theoretical)
~7.95 g/cm3
Informs sputter yield estimation and target mass-loss/lifetime calculations
Curie temperature
~675 C
Marks the ferroelectric-to-paraelectric transition; sets the upper use temperature for polar device layers
Melting point
~1450 C
Sets upper thermal limits for target sintering, bonding, and process design
Appearance
Light yellow to pale cream, opaque polycrystalline ceramic
Visual quality-control indicator of oxidation state and Aurivillius phase purity
Types & Grades of Bismuth Titanate
Bismuth Titanate targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard grade disc target
99.9% (3N)
General-purpose RF sputtering for ferroelectric and piezoelectric thin-film research
High-purity grade
99.99% (4N)
Reduced trace-metal background for FeRAM and piezoelectric MEMS device layers
Ultra-high-purity grade
99.999% (5N), available on request
Low-defect films for fundamental ferroelectric switching and domain-structure studies
Bonded/backed target
99.9% and higher
Indium- or elastomer-bonded to a copper backing plate for improved thermal management under high sputtering power
Custom and rotary configurations
99.9% – 99.99%
Large-area planar or cylindrical rotary formats for pilot-scale and semi-production coating lines
Applications of Bismuth Titanate
Sputtered films of Bismuth Titanate support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Provides a high-Curie-temperature, lead-free polarisation-switching dielectric for data-retention elements
MEMS and sensors
Piezoelectric microactuators and microsensors
Supplies a lead-free piezoelectric film for stress-to-charge and voltage-to-displacement transduction
RF and microwave electronics
Tunable high-frequency dielectric and filter components
Exploits the high thermal coefficient of dielectric constant for frequency-agile passive devices
Optoelectronics and photonics
Second-harmonic-generation and electro-optic thin films
Uses the non-centrosymmetric polar structure for nonlinear optical and electro-optic response
Semiconductor and academic research
Lead-free ferroelectric benchmarking and domain studies
Delivers stoichiometric, phase-pure films for probing polarisation switching and fatigue behaviour
Environmental and regulatory compliance programs
Lead-free replacement for PZT-based thin films
Enables ferroelectric and piezoelectric functionality without regulated lead content
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Bismuth Titanate sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Bismuth Titanate , Bi4Ti3O12
Bismuth Titanate sputter target is a high-purity material possessing ferroelectric, piezoelectric, and pyroelectric properties. It is used for sputtering applications in the production of thin films.
Bismuth Titanate possesses good dielectric characteristics, a high thermal coefficient of dielectric constant, and a high electric field polarization, allowing its use in thin films in memory, sensor, and high-frequency applications.
Bismuth Titanate is prepared through magnetron sputtering, in which Bi₄Ti₃O₁₂ is ionized by a high-energy plasma, causing atoms to be dispersed as a thin film on a substrate.
RF magnetron sputtering is typically used because the oxide target has low electrical conductivity at room temperature; pulsed-DC sputtering is also used with appropriately bonded targets for higher deposition rates.
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