Bismuth Lanthanum Ferrite (Bi(1-x)LaxFeO3) sputtering targets for thin-film deposition of lanthanum-doped bismuth ferrite, a chemically modified derivative of the multiferroic perovskite BiFeO3. Partial substitution of bismuth with lanthanum on the A-site suppresses volatile-bismuth-related defect chemistry, reducing leakage current and strengthening the ferroelectric and piezoelectric response relative to the undoped compound. Targets are available in standard catalogue sizes IN-BiFeLa-01 and IN-BiFeLa-02, with custom dimensions, purities, and La-doping levels (x) produced to order.
Bismuth Lanthanum Ferrite (Bi₁₋ₓLaₓFeO₃) is a La-substituted BiFeO₃ multiferroic retaining the distorted rhombohedral R3c perovskite structure, with La³⁺ partially replacing lone-pair-active Bi³⁺ at the A-site. Typically used at x ≈ 0.05–0.20, La substitution contracts the lattice, suppresses Bi and oxygen vacancy formation, and can substantially reduce leakage current while modifying the ferroelectric and magnetic response. As a sputtering target, pre-alloyed Bi₁₋ₓLaₓFeO₃ provides controlled Bi: La stoichiometry and minimises composition drift caused by the differing volatility of bismuth and lanthanum oxides. RF magnetron sputtering enables uniform thin films for lead-free piezoelectric devices, nonvolatile ferroelectric and magnetoelectric memory, and photovoltaic or photocatalytic research.
Answer: Bi(1-x)LaxFeO₃ sputter targets are deposited as thin films on substrates through magnetron sputtering, forming a precursor base for developing various functional devices in electronics and photonics.
Answer: Sputtering allows for precise film thickness and composition control, ensuring uniform deposition of Bi(1-x)LaxFeO₃ thin films with excellent quality for high-performance device applications.
Answer: As an oxide/insulating ceramic target, RF magnetron sputtering is the standard approach and is recommended for most process development. DC or pulsed-DC operation is possible in some configurations depending on target bonding and system setup, and should be qualified against the specific deposition tool before production use.
Bismuth Lanthanum Ferrite (Bi₁₋ₓLaₓFeO₃) is a La-substituted BiFeO₃ multiferroic retaining the distorted rhombohedral R3c perovskite structure, with La³⁺ partially replacing lone-pair-active Bi³⁺ at the A-site. Typically used at x ≈ 0.05–0.20, La substitution contracts the lattice, suppresses Bi and oxygen vacancy formation, and can substantially reduce leakage current while modifying the ferroelectric and magnetic response. As a sputtering target, pre-alloyed Bi₁₋ₓLaₓFeO₃ provides controlled Bi: La stoichiometry and minimises composition drift caused by the differing volatility of bismuth and lanthanum oxides. RF magnetron sputtering enables uniform thin films for lead-free piezoelectric devices, nonvolatile ferroelectric and magnetoelectric memory, and photovoltaic or photocatalytic research.
Key Properties of Bismuth Lanthanum Ferrite
Property
Value
Significance
Chemical Formula
Bi(1-x)LaxFeO3
Identifies the material as a lanthanum-substituted solid solution of BiFeO3 rather than a fixed-stoichiometry compound
Crystal Structure
Rhombohedral perovskite, space group R3c (transitioning toward orthorhombic/pseudo-tetragonal at higher x)
Governs the ferroelectric polarisation axis and the structural distortion that couples electrical and magnetic order
CAS Number
Not established
No CAS registry number is assigned to this variable-composition solid solution; not to be confused with CAS 12010-42-3, which designates unsubstituted bismuth ferrite (BiFeO3)
Molar Mass
~299 – 313 g/mol (x-dependent)
Basis for stoichiometric calculations in target fabrication and film thickness/deposition-rate estimates
Density (theoretical)
~7.5 – 8.2 g/cm3
Benchmarks the sintered target’s achievable density, typically reported at greater than 90% of theoretical for production targets
Purity
99.9% – 99.99%
Limits secondary-phase and trace-metal content that increases leakage current and degrades ferroelectric switching
Ferroelectric Polarization
Reduced coercive field and lower leakage current versus undoped BiFeO3
Enables measurable, well-saturated polarisation-electric field loops in bulk and thin-film form
Magnetic Ordering
Weak (canted) ferromagnetism superimposed on G-type antiferromagnetic order.
Provides the magnetoelectric coupling that defines the material’s multiferroic behaviour
Types & Grades of Bismuth Lanthanum Ferrite
Bismuth Lanthanum Ferrite targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard Research Grade
99.9%
Economical option for early-stage multiferroic and ferroelectric film screening and sputtering process development
High-Purity Ferroelectric Grade
99.99%
Reduced oxygen-vacancy and secondary-phase content for lower leakage current and cleaner polarisation switching
Custom La-Doping Level (x)
99.9% – 99.99%, custom composition
Lanthanum fraction adjusted to tune the leakage-current suppression and polarisation-versus-magnetisation tradeoff for a target device design
Bonded Target (indium or elastomer backing)
99.9% and higher
Improved thermal conductivity for extended RF magnetron sputtering runs without target cracking
Rotary/Cylindrical Format
99.9% and higher
Higher material utilisation and longer campaign life for high-throughput production coating lines
Applications of Bismuth Lanthanum Ferrite
Sputtered films of Bismuth Lanthanum Ferrite support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Multiferroic Memory Research
Magnetoelectric random-access memory (ME-RAM) and multiferroic tunnel junction studies
Provides electric-field control of magnetic order in a single film through robust ferroelectric-magnetic coupling
Lead-Free Piezoelectrics
Piezoelectric actuator and sensor films replacing lead zirconate titanate (PZT)
Delivers usable piezoelectric response from an environmentally compliant, lead-free perovskite system
Ferroelectric Thin-Film Devices
Nonvolatile ferroelectric capacitors and field-effect memory elements
Reduced leakage current relative to undoped BiFeO3 supports reliable polarisation retention and switching
Photovoltaic and Photocatalytic Research
Visible-light-active thin-film absorber and photoelectrode studies
Narrow bandgap combined with ferroelectric polarisation supports above-bandgap photovoltage and bulk photovoltaic effect studies
Spintronics and Magnetoelectronics
Exchange-bias and spin-filter heterostructure development
Canted magnetic moment coupled to ferroelectric order enables electric-field-tunable spin-dependent behaviour
Materials Research
A-site substitution and structural phase-boundary studies
Serves as a model system for studying how lanthanide doping tunes multiferroic behaviour across the BiFeO3-LaFeO3 solid-solution series
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Bismuth Lanthanum Ferrite sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Bismuth Lanthanum Ferrite, Bi(1-x)LaxFeO3
Bi(1-x)LaxFeO₃ sputter targets are deposited as thin films on substrates through magnetron sputtering, forming a precursor base for developing various functional devices in electronics and photonics.
Sputtering allows for precise film thickness and composition control, ensuring uniform deposition of Bi(1-x)LaxFeO₃ thin films with excellent quality for high-performance device applications.
As an oxide/insulating ceramic target, RF magnetron sputtering is the standard approach and is recommended for most process development. DC or pulsed-DC operation is possible in some configurations depending on target bonding and system setup, and should be qualified against the specific deposition tool before production use.
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