Bismuth Dysprosium Iron Gallate, Bi2DyFe4GaO12

Bismuth Dysprosium Iron Gallate (Bi2DyFe4GaO12) sputtering targets for deposition of magneto-optical iron garnet thin films. This bismuth- and gallium-substituted dysprosium iron garnet is engineered for large Faraday rotation with reduced optical absorption, supporting ferrimagnetic thin-film performance in integrated photonic and magneto-optic sensor applications. Targets are available in standard catalogue sizes IN-BiDyFeGa-01 and IN-BiDyFeGa-02, with custom dimensions, purities, and cation ratios produced to order.

Purity (%) :>99.9
Dimensions :Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25”
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Introduction to Bismuth Dysprosium Iron Gallate

Bismuth Dysprosium Iron Gallate (Bi₂DyFe₄GaO₁₂) is a bismuth-substituted rare-earth iron garnet with the cubic garnet structure, containing Bi³⁺ and Dy³⁺ on dodecahedral sites and Ga³⁺ partially substituting for Fe³⁺ on the octahedral/tetrahedral sublattices. Bi³⁺ strongly enhances magneto-optical activity and Faraday rotation, while Ga³⁺ dilutes the iron sublattice, reducing saturation magnetisation and optical absorption. Dy³⁺ contributes additional magnetocrystalline anisotropy, allowing magnetic and optical properties to be balanced. As a sputtering target, a pre-alloyed ceramic composition provides precise Bi:Dy:Fe stoichiometry and wafer-scale uniformity. RF or pulsed-DC magnetron sputtering enables thin films for optical isolators and circulators, magneto-optic sensors, and planar nonreciprocal photonic devices requiring strong Faraday rotation with controlled optical loss.

FAQs

Question: What is bismuth dysprosium iron gallate used for?

Answer: Bismuth dysprosium iron gallate is also used in magnetoelectric devices, microwave technology, magnetic refrigeration, and spintronic applications.

Question: Why is Bi₂DyFe₄GaO₁₂ used as a sputtering target?

Answer: Bi₂DyFe₄GaO₁₂ is a sputtering target to create thin films with excellent magnetic, optical, and multiferroic properties.

Question: How is Bi₂DyFe₄GaO₁₂ deposited using sputtering?

Answer: Bi₂DyFe₄GaO₁₂ is deposited using magnetron sputtering or radio-frequency (RF) sputtering techniques.