| Catalogue Code | IN-BiCeFe-01 IN-BiCeFe-02 |
| CAS No. | 12010-42-3 |
| Chemical Formula | Ce2.2Bi0.8Fe5 |
| Compound Name | Cerium Bismuth Ferrite |
| Purity (%) | >99.9 |
| Dimensions | Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25” |
Introduction
Cerium Bismuth Ferrite (Ce₂.₂Bi₀.₈Fe₅) sputter target is a specialized material that produces thin films with unique multiferroic properties, combining ferroelectric, magnetic, and dielectric characteristics. This compound is precious for applications in magnetoelectrics, memory devices, and sensors. The high purity of the Ce₂.₂Bi₀.₈Fe₅ sputter target ensures the deposition of films with consistent composition and excellent performance in advanced technological applications. These thin films are ideal for devices that require the coupling of electric and magnetic fields, such as in non-volatile memory, spintronic devices, and energy harvesting systems. The material’s stability and precision during sputtering make it essential for developing next-generation multifunctional devices.
Properties of Cerium Bismuth Ferrite
The table below presents the properties of Cerium Bismuth Ferrite:
| Property | Details |
| Appearance | Solid, circular, disc, and rectangular. |
| Molar mass | 410.24 g/mol |
| Magnetic property | It is a ferromagnetic material |
Applications for Cerium Bismuth Ferrite
Ce2.2Bi0.8Fe5 is a perspective material with ferroelectric and magnetic properties, making it suitable for many applications. Below are a few Cerium Bismuth Ferrite applications:
- Ce₂.₂Bi₀.₈Fe₅ sputter targets are used to fabricate a thin film for non-volatile memory devices, FeRAM, where it applies its ferroelectric properties in storing information and not relying on power.
- Its magnetic and electric properties enable it to be used in spintronic devices that apply electron charge and spin to achieve higher performance.
- Thin films of Ce₂.₂Bi₀.₈Fe₅ are applied in magnetic sensors, providing high sensitivity of an external magnetic field for applications as a detection system.
- Ce₂.₂Bi₀.₈Fe₅ thin films are used for energy harvesting devices that convert mechanical stress or temperature differences into electrical energy.
- Sputtered Ce₂.₂Bi₀.₈Fe₅ films are used in actuators that respond to electric or magnetic fields to produce mechanical strain for accuracy control.
- The dielectric properties make its thin films suitable for high-frequency applications in microwave filters and antennas.
- It is applied in magnetoelectric devices. Their structural coupling permits control of electric and magnetic fields.
- Thin films of Ce₂.₂Bi₀.₈Fe₅ are applied in optoelectronic devices, such as photonic systems and LEDs, enhancing their performance based on their combined properties.
FAQs
Answere: Ce₂.₂Bi₀.₈Fe₅ sputter targets are used in non-volatile memory devices (FeRAM), spintronic devices, magnetic sensors, energy harvesting devices, actuators, microwave devices, magnetoelectric devices, optoelectronic and catalytic fields.
Answere: The material's Resonating Magnetic and Electric characteristics enable Spintronics technology devices that utilize the spin of the electrons to perform data processing in superior ways while consuming less energy.
Answere: Devices that benefit from it include non-volatile memory (FeRAM), spintronic devices, sensors, actuators, energy harvesting systems, microwave devices, and optoelectronic components, all of which rely on its unique magnetoelectric and dielectric properties.
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