Lead Zirconate Titanate with Niobium, PbZr0.52Ti0.48O3 with 1 at% Nb
Niobium-doped lead zirconate titanate (PNZT, or soft PZT) sputtering targets are formulated at the industry-standard morphotropic phase boundary composition PbZr0.52Ti0.48O3 with approximately 1 atomic per cent niobium donor doping. The added niobium produces a softer ferroelectric response than undoped PZT, with higher permittivity, lower coercive field, and improved resistance to ageing, making the material a preferred choice for high-performance piezoelectric MEMS films. Each target is supplied in standard 1 in and 2 in diameter discs, with composition, density, and dopant level controlled across every production lot for reproducible RF magnetron sputtering.
Introduction to Lead Zirconate Titanate with Niobium
PNZT is a niobium-doped PZT ceramic retaining the perovskite ABO₃ structure, with Pb²⁺ on the A-site and Zr⁴⁺/Ti⁴⁺ on the B-site near the 52/48 Zr morphotropic phase boundary. Approximately 1 at% Nb⁵⁺ donor doping creates lead vacancies, reducing defect-related domain-wall pinning and producing a softer piezoelectric response with higher dielectric permittivity and piezoelectric coefficients. Sputtering from dense PNZT ceramic targets enables controlled Zr: Ti composition and uniform thin-film deposition on silicon, platinum-coated silicon, and other substrates. PNZT films are widely investigated for piezoelectric MEMS actuators, cantilevers, micromachined ultrasonic transducers, and other devices requiring large displacement, low-voltage operation, and stable cyclic performance.
Answer: PZTN is commonly used to create thin films for piezoelectric, ferroelectric, and dielectric applications in sensors, actuators, and memory devices.
Answer: Niobium doping enhances electrical conductivity and modifies the ferroelectric and piezoelectric properties, improving the performance of thin films for specific applications.
Answer: PZTN targets are primarily used in RF or DC magnetron sputtering systems for thin-film deposition on substrates like silicon, glass, or ceramics.
Introduction to Lead Zirconate Titanate with Niobium
PNZT is a niobium-doped PZT ceramic retaining the perovskite ABO₃ structure, with Pb²⁺ on the A-site and Zr⁴⁺/Ti⁴⁺ on the B-site near the 52/48 Zr morphotropic phase boundary. Approximately 1 at% Nb⁵⁺ donor doping creates lead vacancies, reducing defect-related domain-wall pinning and producing a softer piezoelectric response with higher dielectric permittivity and piezoelectric coefficients. Sputtering from dense PNZT ceramic targets enables controlled Zr: Ti composition and uniform thin-film deposition on silicon, platinum-coated silicon, and other substrates. PNZT films are widely investigated for piezoelectric MEMS actuators, cantilevers, micromachined ultrasonic transducers, and other devices requiring large displacement, low-voltage operation, and stable cyclic performance.
Key Properties of Lead Zirconate Titanate with Niobium
Property
Value
Significance
Chemical formula
PbZr0.52Ti0.48O3 with ~1 at% Nb (PNZT)
Defines the morphotropic phase boundary composition and donor-dopant level that set the soft-PZT electromechanical response
CAS number
12626-81-2
Assigned to the base lead zirconate titanate compound family; used for procurement, safety documentation, and regulatory compliance
Molar mass
~326 g/mol
Basis for stoichiometric batching calculations and deposition rate modelling
Density (target)
~7.6 to 8.0 g/cm3
High relative density supports stable plasma behaviour and low-particulate film growth
Crystal structure
Perovskite (ABO3), tetragonal/rhombohedral coexistence at MPB
Governs the anisotropic piezoelectric and ferroelectric response of deposited films
Dopant mechanism
Nb5+ donor doping on the B-site, ~1 at%, vacancy-compensated
Produces soft-PZT behaviour: higher permittivity, lower coercive field, and reduced ageing versus undoped PZT
Curie temperature
~250-380 C (composition and doping dependent)
Marks the ferroelectric-to-paraelectric transition and sets the practical upper limit for device operation and poling
Electrical resistivity
High (insulating ceramic, greater than 10^9 ohm-cm at room temperature)
Requires RF or pulsed-DC magnetron sputtering rather than conventional DC sputtering
Types & Grades of Lead Zirconate Titanate with Niobium
Lead Zirconate Titanate with Niobium targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard PNZT (1 at% Nb, 52/48 Zr:Ti)
99.9%
Default soft-PZT formulation for general MEMS actuator and sensor thin films, catalogue codes IN-PZTNb-01/02
Elevated Nb-doped soft PZT (2-3 at% Nb)
99.9% – 99.99%
Further reduced coercive field and increased permittivity for low-voltage actuation designs
High-density hot-pressed target
99.95% and above
Minimised porosity for low-particulate RF sputtering of thicker, higher-quality films
Custom off-stoichiometry (Pb-excess) target
99.9%, custom
Compensates for preferential lead loss during sputtering to preserve as-deposited film stoichiometry
Research-scale precursor powder / pressed pellet
99.9% – 99.99%
Calcined PNZT feedstock for custom target hot-pressing or bespoke pellet fabrication
Applications of Lead Zirconate Titanate with Niobium
Sputtered films of Lead Zirconate Titanate with Niobium support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
MEMS and microsystems
Piezoelectric micro-actuators and cantilevers
Converts an applied electric field into large, repeatable mechanical displacement at reduced drive voltage
Consumer electronics
Inkjet printhead actuators
High piezoelectric charge coefficient enables precise, low-voltage droplet ejection.
Medical devices
Ultrasound transducers and micromachined ultrasound transducers (pMUTs)
High electromechanical coupling and low ageing improve imaging sensitivity and long-term calibration stability
Automotive and industrial sensing
Vibration, pressure, and knock sensors
Stable piezoelectric response over repeated cycling supports reliable long-term sensing in harsh environments.
RF and telecommunications
RF MEMS switches and tunable filters
Tailored permittivity and low coercive field support fast, low-power switching elements
Energy harvesting
Vibration-based piezoelectric micro-generators
Enhanced piezoelectric coefficients from Nb doping increase electrical energy output per unit strain.
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lead Zirconate Titanate with Niobium sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Lead Zirconate Titanate with Niobium, PbZr0.52Ti0.48O3 with 1 at% Nb
Niobium doping enhances electrical conductivity and modifies the ferroelectric and piezoelectric properties, improving the performance of thin films for specific applications.
Factors include sputtering parameters (power, pressure, temperature), substrate preparation, and post-deposition annealing processes.
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