Indium Aluminium Zinc Oxide (IAZO) sputtering targets as sintered ceramic discs and blocks for physical vapour deposition of transparent conductive and dielectric oxide thin films. Formulated from an In2O3/Al2O3/ZnO matrix at 65/16/19 wt% as standard, IAZO targets sit between conventional indium tin oxide electrodes and gallium- or aluminium-doped alternatives, offering resistivity that can be tuned from semiconducting toward strongly dielectric behaviourIntroduction to Indium Aluminum Zinc Oxide. Standard 1 in and 2 in diameter discs are stocked, with custom sizes, thicknesses, and In2O3:Al2O3:ZnO ratios available for both R&D and production coating lines.
IAZO (In₂O₃–Al₂O₃–ZnO) is a mixed-metal oxide based on the In₂O₃ bixbyite lattice, with aluminium and zinc modifying its optical and electrical properties. Aluminium widens the bandgap and suppresses free-carrier concentration, allowing conductivity and resistivity to be tailored through composition and oxygen-vacancy control. As a sputtering target, IAZO provides stable In:Al:Zn:O stoichiometry and uniform film deposition with minimal composition drift. Magnetron sputtering produces amorphous or nanocrystalline films suitable for oxide-TFT backplanes, gate-dielectric and buffer layers, thin-film photovoltaics, low-emissivity and solar-control glass, and flexible electronics. Its tunable optical and electrical properties make it useful where conventional ITO conductivity is not required.
Answer: The quality of IAZO thin films depends on parameters like: Substrate temperature Sputtering power and pressure Gas composition (e.g., argon and oxygen ratio)
Answer: IAZO targets come in various sizes, compositions, and purities (e.g., >99.9%). The exact specifications depend on the application and equipment used.
Answer: IAZO replaces the gallium oxide used in IGZO with aluminum oxide, avoiding gallium supply and cost constraints while providing a comparable amorphous mixed-oxide platform; the resulting electrical and optical properties depend on the specific In:Al:Zn ratio chosen.
IAZO (In₂O₃–Al₂O₃–ZnO) is a mixed-metal oxide based on the In₂O₃ bixbyite lattice, with aluminium and zinc modifying its optical and electrical properties. Aluminium widens the bandgap and suppresses free-carrier concentration, allowing conductivity and resistivity to be tailored through composition and oxygen-vacancy control. As a sputtering target, IAZO provides stable In:Al:Zn:O stoichiometry and uniform film deposition with minimal composition drift. Magnetron sputtering produces amorphous or nanocrystalline films suitable for oxide-TFT backplanes, gate-dielectric and buffer layers, thin-film photovoltaics, low-emissivity and solar-control glass, and flexible electronics. Its tunable optical and electrical properties make it useful where conventional ITO conductivity is not required.
Key Properties of Indium Aluminium Zinc Oxide
Property
Value
Significance
Chemical composition
In2O3/Al2O3/ZnO, 65/16/19 wt%
sets the cation ratio and therefore the bandgap, carrier density, and resistivity of the deposited film
Reflects the In2O3-dominant host lattice into which Al and Zn are incorporated
Appearance
Light yellow to tan sintered ceramic
Serves as a visual quality check; excessive grey or dark tone can indicate sub-stoichiometric oxygen content or contamination
Purity
99.9% – 99.99% (metals basis)
controls trace-metal contamination, which affects film resistivity, optical transmittance, and defect density
Theoretical density
~6.0 g/cm3, calculated from component wt% and densities
provides the benchmark against which sintered relative density is measured
Sintered relative density
>=90% of theoretical, higher on premium grades
Higher relative density reduces void-driven arcing and particulate generation during sputtering
Electrical character
Tunable from semiconducting to highly resistive/dielectric depending on Al2O3 fraction
the standard 16 wt% Al2O3 grade behaves as a wide-bandgap, high-resistivity oxide rather than a low-resistivity TCO
Component melting points
In2O3 ~1910 C, Al2O3 2072 C, ZnO ~1975 C
Informs the sintering and hot-press schedule and the target’s thermal stability window during sputtering
Types & Grades of Indium Aluminium Zinc Oxide
Indium Aluminium Zinc Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard sintered disc, indium-bonded
99.9%
general-purpose R&D sputtering; indium bonding to a copper backing plate improves heat dissipation during use
High-purity sintered disc, elastomer-bonded
99.99%
production-grade coating runs where low trace-metal contamination is required, such as display and microelectronics work
Rectangular/planar block target
99.9% – 99.99%
Sized for large-area in-line or rotary coaters used on architectural or display glass
Custom-composition IAZO
99.9% – 99.99%
In2O3:Al2O3:ZnO ratio adjusted from the standard 65/16/19 wt% to target a specific resistivity, bandgap, or dielectric constant
Bonded cylindrical/rotary target
99.9%
Supports high-throughput in-line sputtering on large-substrate production lines
Applications of Indium Aluminium Zinc Oxide
Sputtered films of Indium Aluminium Zinc Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Flat-panel displays
Thin-film-transistor backplane and gate-dielectric layers
Provides a wide-bandgap insulating or semi-insulating oxide layer compatible with oxide-TFT process flow
Photovoltaics
Transparent electrode and buffer layers in thin-film solar cells
forms an optically transparent, chemically stable oxide interlayer within the cell stack
Architectural and automotive glass
Low-emissivity and solar-control coatings
contributes a stable oxide layer to multilayer stacks that manage infrared reflection and visible transmittance
Microelectronics
Gate dielectric and passivation films in oxide-semiconductor devices
The high-Al2O3 formulation supplies a wide-bandgap insulating layer over active device regions
Flexible and printed electronics
Transparent conductive or dielectric films on polymer substrates
room-temperature-compatible sputtering supports the low thermal budget flexible substrates require
Research and academic laboratories
Combinatorial TCO and dielectric composition studies
A single compounded target family enables systematic study of the In-Al-Zn-O property space against IGZO, IZO, and AZO alternatives
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Indium Aluminium Zinc Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Indium Aluminum Zinc Oxide, In2O3/Al2O3/ZnO 65/16/19 wt%
The quality of IAZO thin films depends on parameters like: Substrate temperature Sputtering power and pressure Gas composition (e.g., argon and oxygen ratio)
IAZO replaces the gallium oxide used in IGZO with aluminum oxide, avoiding gallium supply and cost constraints while providing a comparable amorphous mixed-oxide platform; the resulting electrical and optical properties depend on the specific In:Al:Zn ratio chosen.
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