Lanthanum Manganate (LaMnO3) sputtering targets from Infinita Materials deliver the undoped parent perovskite of the colossal-magnetoresistance manganite family in dense, high-purity ceramic form. The material combines an orthorhombic, Jahn-Teller-distorted perovskite lattice with antiferromagnetic insulating behaviour, making it a foundational building block for oxide-electronics and spintronic thin-film research. Supplied in standard 1 in and 2 in disc formats or custom configurations, each target is manufactured to consistent stoichiometry and grain density for reliable magnetron and RF sputtering performance.
Lanthanum Manganate LaMnO3 crystallises in an orthorhombic Pnma perovskite structure, with La3+ occupying the A-site and Jahn-Teller-active Mn3+ ions surrounded by MnO6 octahedra. Cooperative octahedral distortion produces orbital ordering and an insulating ground state, while stoichiometric LaMnO3 exhibits A-type antiferromagnetic ordering below approximately 140 K. As the parent compound of hole-doped manganites such as La1-xSrxMnO3, it provides an important reference for studying correlated magnetic and electronic behaviour. As a sputtering target, dense LaMnO3 ceramic enables uniform, stoichiometric thin films for oxide electronics, magnetic multilayers, epitaxial buffer layers, solid oxide fuel cells, and catalytic or photocatalytic coatings.
Answer: LaMnO3 is used as a sputtering target to deposit thin films for applications in perovskite-based materials, thermistors, resistive switching devices, and oxygen sensors.
Answer: LaMnO3 has high thermal stability, good electrical conductivity, and an appropriate lattice structure for thin film deposition, making it ideal for creating high-quality films in electronic devices.
Answer: Challenges include the target's tendency to degrade under certain conditions and achieving consistent stoichiometric deposition due to variations in the target's material composition during sputtering.
Lanthanum Manganate LaMnO3 crystallises in an orthorhombic Pnma perovskite structure, with La3+ occupying the A-site and Jahn-Teller-active Mn3+ ions surrounded by MnO6 octahedra. Cooperative octahedral distortion produces orbital ordering and an insulating ground state, while stoichiometric LaMnO3 exhibits A-type antiferromagnetic ordering below approximately 140 K. As the parent compound of hole-doped manganites such as La1-xSrxMnO3, it provides an important reference for studying correlated magnetic and electronic behaviour. As a sputtering target, dense LaMnO3 ceramic enables uniform, stoichiometric thin films for oxide electronics, magnetic multilayers, epitaxial buffer layers, solid oxide fuel cells, and catalytic or photocatalytic coatings.
Key Properties of Lanthanum Manganate
Property
Value
Significance
Chemical formula
LaMnO3
Stoichiometric parent perovskite manganite with La3+ at the A-site and Mn3+ at the B-site
CAS number
12031-12-8
Unique registry identifier used for procurement, customs, and safety documentation
Molar mass
~241.84 g/mol
Basis for calculating stoichiometric mass transfer from target to deposited film
Density (theoretical)
~6.5 g/cm3
Determines target mass for a given geometry and informs sputter yield expectations
Governs lattice-matching behaviour against common oxide substrates during epitaxial growth
Magnetic ordering
A-type antiferromagnetic, Neel temperature approximately 140 K (undoped)
Establishes the insulating magnetic baseline from which doped CMR manganites are derived
Electronic character
Insulating (undoped, stoichiometric)
Distinguishes the parent compound from conducting or half-metallic doped manganite films
Thermal conductivity
~2 W/m*K
Low value requires conservative power ramping and often indium bonding to prevent thermal-shock cracking.
Types & Grades of Lanthanum Manganate
Lanthanum Manganate targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard ceramic, 2N
99%
General-purpose R&D deposition and process development where cost sensitivity outweighs trace-purity requirements
High-purity ceramic, 3N
99.9%
Infinita Materials standard catalogue grade (IN-LaMn-01, IN-LaMn-02), balancing cost and film performance for routine RF/magnetron sputtering
Ultra-high-purity ceramic, 4N
99.99%
Reduced trace-metal content for spintronic multilayers and magnetic tunnel junction stacks sensitive to contamination
Research-grade, 5N
99.999%
Reserved for fundamental Jahn-Teller and colossal-magnetoresistance physics studies requiring minimal defect and impurity states
Indium-bonded target
99.9% typical
Ceramic disc bonded to a copper backing plate to compensate for low thermal conductivity and brittleness during high-power sputtering.
Applications of Lanthanum Manganate
Sputtered films of Lanthanum Manganate support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Semiconductor and thin-film electronics
Perovskite oxide thin-film growth
Sputtered as a parent-compound layer or precursor stage for doped manganite heterostructures
Spintronics and magnetic devices
CMR-manganite multilayers and tunnel junctions
Provides an antiferromagnetic, insulating reference or buffer layer adjacent to conducting manganite films
Energy and solid oxide fuel cells
Cathode-adjacent functional coatings
Perovskite lattice compatibility supports development of mixed ionic-electronic conductor layers.
Catalysis and environmental technology
Photocatalytic and dehydrogenation coatings
Deposited films degrade organic dyes such as methylene blue and catalyse ethane dehydrogenation reactions.
Superconducting electronics
Buffer and template layers for oxide superconducting films
Perovskite structure supplies a lattice-matched template for epitaxial growth of superconducting oxide layers
Academic and materials research
Model system for strongly correlated electron physics
Undoped LaMnO3 films support study of Jahn-Teller distortion, orbital ordering, and the origins of colossal magnetoresistance
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lanthanum Manganate sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Lanthanum Manganate, LaMnO3
LaMnO3 is used as a sputtering target to deposit thin films for applications in perovskite-based materials, thermistors, resistive switching devices, and oxygen sensors.
LaMnO3 has high thermal stability, good electrical conductivity, and an appropriate lattice structure for thin film deposition, making it ideal for creating high-quality films in electronic devices.
Challenges include the target's tendency to degrade under certain conditions and achieving consistent stoichiometric deposition due to variations in the target's material composition during sputtering.
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