Lanthanum nickel oxide (LaNiO3) is supplied by Infinita Materials as a high-density ceramic sputtering target for depositing conductive perovskite oxide thin films. Unlike most rare-earth transition-metal oxides, LaNiO3 is a correlated metal in its bulk and thin-film form, making it the standard choice for epitaxial bottom electrodes beneath ferroelectric and multiferroic oxide layers. Targets are produced as sintered discs at 99.9% to 99.99% purity, with custom sizes, bonding, and rotary configurations available for research and production-scale physical vapour deposition.
Lanthanum Nickel Oxide LaNiO3 crystallises in a rhombohedrally distorted perovskite structure (R-3c), consisting of corner-sharing NiO6 octahedra with La3+ occupying the A-site and Ni3+ at the B-site. Unlike other rare-earth nickelates, LaNiO3 is metallic and exhibits weak paramagnetism due to itinerant electronic behaviour. Its oxygen stoichiometry is sensitive to reducing conditions, which can cause decomposition. As a sputtering target, dense LaNiO3 ceramic enables reproducible deposition of conductive, epitaxial oxide films on substrates such as SrTiO3 and LaAlO3. Sputtered LaNiO3 films are widely used as conductive bottom electrodes, templates, and buffer layers in ferroelectric, oxide-electronic, fuel-cell, sensing, and emerging memory applications.
Answer: LaNiO3 targets are primarily used for depositing thin films in electronics, sensors, and fuel cells, particularly for conducting oxide layers and electrode materials.
Answer: LaNiO3 offers high electrical conductivity, thermal stability, and chemical stability, making it suitable for applications requiring high-performance conductive films.
Answer: LaNiO3 is typically deposited using sputtering techniques, including RF sputtering, which allows for precise film thickness and uniformity control.
Answer: The main challenges include maintaining a stable deposition rate, minimizing oxidation during sputtering, and ensuring target uniformity and film adhesion.
Lanthanum Nickel Oxide LaNiO3 crystallises in a rhombohedrally distorted perovskite structure (R-3c), consisting of corner-sharing NiO6 octahedra with La3+ occupying the A-site and Ni3+ at the B-site. Unlike other rare-earth nickelates, LaNiO3 is metallic and exhibits weak paramagnetism due to itinerant electronic behaviour. Its oxygen stoichiometry is sensitive to reducing conditions, which can cause decomposition. As a sputtering target, dense LaNiO3 ceramic enables reproducible deposition of conductive, epitaxial oxide films on substrates such as SrTiO3 and LaAlO3. Sputtered LaNiO3 films are widely used as conductive bottom electrodes, templates, and buffer layers in ferroelectric, oxide-electronic, fuel-cell, sensing, and emerging memory applications.
Key Properties of Lanthanum Nickel Oxide
Property
Value
Significance
Chemical formula
LaNiO3
Defines the stoichiometric ABO3 perovskite composition of the sintered target
CAS number
12031-18-4
Unique registry identifier for the compound across suppliers and safety documentation
Molar mass
~245.60 g/mol
Basis for stoichiometric, deposition-rate, and target-consumption calculations
Crystal structure
Rhombohedral perovskite, space group R-3c
Determines epitaxial lattice matching to perovskite oxide substrates
Theoretical density
~7.20 g/cm3
Reference point for evaluating sintered target relative density and pore content
Electrical behavior
Metallic conductor (itinerant Ni 3+ band states)
Enables use as a conductive electrode layer without an added dopant
Magnetic behavior
Pauli paramagnetic (itinerant, no long-range order)
Distinguishes it from the antiferromagnetic insulating nickelates further down the RNiO3 series
Thermal stability
Stable in oxidising atmosphere; loses lattice oxygen above roughly 850-1000 C under reducing or vacuum conditions.
Governs required oxygen partial pressure during sputtering and post-deposition annealing
Types & Grades of Lanthanum Nickel Oxide
Lanthanum Nickel Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard grade (3N, 99.9%)
99.9%
General-purpose grade for bottom-electrode and buffer-layer deposition in most research stacks
High-purity grade (4N, 99.99%)
99.99%
Reduced trace-metal content for research requiring lower defect and impurity levels
Ultra-high-purity grade (5N, 99.999%)
99.999%
Speciality grade for low-defect-density device work where trace contamination affects performance
Indium-bonded planar disc
99.9% and above
Improves thermal contact and crack resistance for this brittle, low-thermal-conductivity ceramic under RF or DC power
Custom rotary/cylindrical target
99.9% – 99.99%
Configured for high-throughput in-line or roll-to-roll magnetron sputtering systems
Applications of Lanthanum Nickel Oxide
Sputtered films of Lanthanum Nickel Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Oxide electronics
Bottom electrode for PZT, BiFeO3, and barium-titanate-based ferroelectric capacitors
Conductive perovskite template that enables epitaxial growth and stable polarisation switching
Semiconductor and materials R&D
Buffer/electrode layer in epitaxial oxide heterostructures
Lattice-matched conductive interlayer between the substrate and the functional oxide film
Energy and fuel cells
Solid oxide fuel cell cathode and interconnect coatings
Mixed ionic-electronic conducting oxide layer compatible with high-temperature operation
Gas sensing
Thin-film resistive and catalytic gas sensor elements
Oxide surface whose conductivity responds measurably to surface gas adsorption
Data storage
Electrode layer in oxide-based resistive and magnetic memory device stacks
Conductive oxide contact compatible with adjacent memristive or magnetic oxide films
Academic and photonics research
Transparent and functional conductive oxide film studies
Conductive oxide layer used to probe correlated-electron and interface physics
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lanthanum Nickel Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Lanthanum Nickel Oxide, LaNiO3
LaNiO3 targets are primarily used for depositing thin films in electronics, sensors, and fuel cells, particularly for conducting oxide layers and electrode materials.
LaNiO3 offers high electrical conductivity, thermal stability, and chemical stability, making it suitable for applications requiring high-performance conductive films.
The main challenges include maintaining a stable deposition rate, minimizing oxidation during sputtering, and ensuring target uniformity and film adhesion.
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