Strontium manganate (SrMnO3) is a manganese-based perovskite oxide supplied by Infinita Materials as a high-purity sputtering target for research and production thin-film deposition. As the parent compound of the strontium-doped manganite family prized for colossal magnetoresistance and strain-tunable multiferroic behaviour, SrMnO3 targets give film growers a direct route to antiferromagnetic Mn4+ perovskite layers without the compositional drift that can accompany multi-cation co-sputtering.
SrMnO₃ contains Mn⁴⁺ (d³) within a MnO₆ octahedral framework. Its stable bulk form is hexagonal, while the metastable cubic perovskite phase can be stabilised epitaxially on substrates such as SrTiO₃ and LaAlO₃. The cubic phase is a G-type antiferromagnetic insulator with a Néel temperature near 233 K, while oxygen deficiency can introduce mixed Mn³⁺/Mn⁴⁺ states and conductivity. Sputtered SrMnO₃ films enable strain engineering of polar distortions and multiferroic behaviour. They also provide atomically sharp interfaces in manganite superlattices for studying interfacial magnetism, exchange coupling, and emergent electronic phenomena. Ceramic targets support controlled stoichiometry, uniform deposition, and scalable thin-film fabrication.
Answer: SrMnO₃ sputtering targets deposit thin films with specific electronic and magnetic properties for energy systems, sensors, and spintronics applications.
Answer: SrMnO₃ exhibits high activity in catalytic processes, particularly in oxygen evolution reactions, making it vital for renewable energy applications.
Answer: Yes, SrMnO₃ thin films can be engineered during the deposition process to achieve specific conductivity, magnetic properties, and thickness, depending on the application.
SrMnO₃ contains Mn⁴⁺ (d³) within a MnO₆ octahedral framework. Its stable bulk form is hexagonal, while the metastable cubic perovskite phase can be stabilised epitaxially on substrates such as SrTiO₃ and LaAlO₃. The cubic phase is a G-type antiferromagnetic insulator with a Néel temperature near 233 K, while oxygen deficiency can introduce mixed Mn³⁺/Mn⁴⁺ states and conductivity. Sputtered SrMnO₃ films enable strain engineering of polar distortions and multiferroic behaviour. They also provide atomically sharp interfaces in manganite superlattices for studying interfacial magnetism, exchange coupling, and emergent electronic phenomena. Ceramic targets support controlled stoichiometry, uniform deposition, and scalable thin-film fabrication.
Key Properties of Strontium Manganate
Property
Value
Significance
Crystal structure
Hexagonal (4H, P6_3/mmc) bulk-stable; cubic perovskite (Pm-3m) metastable, epitaxially stabilised as thin film
Substrate choice selects the perovskite polymorph needed for strain engineering and superlattice matching
Lattice parameter (cubic phase)
~3.80-3.81 Angstrom
Close lattice match to SrTiO3 and related perovskite substrates enables coherent, low-defect epitaxy.
Manganese oxidation state
Mn4+ (3d3), formally stoichiometric SrMnO3
Sets the antiferromagnetic insulating ground state and distinguishes the film from mixed-valence La-doped manganites
Magnetic ordering
G-type antiferromagnetic, Neel temperature ~233 K (cubic phase, strain-dependent)
Enables use as a magnetically inert or antiferromagnetically coupled spacer layer in manganite heterostructures
Electronic character
Mott-Hubbard-type insulator when stoichiometric; conductivity rises with oxygen deficiency
Oxygen partial pressure during and after sputtering directly tunes film resistivity and defect chemistry
Melting point
~1500-1550 C
Confirms suitability for high-temperature ceramic processing and post-deposition annealing
Thermal conductivity
~2.5-3.0 W/(m K)
Moderate value requires controlled sputtering power ramps to avoid thermal-shock cracking of the ceramic target.
Sputtering behavior
Sinters to a dense, low-porosity ceramic; sputters cleanly by RF and pulsed-DC reactive sputtering
High target density minimises arcing and particulate generation, supporting stoichiometric, low-defect film transfer.
Types & Grades of Strontium Manganate
Strontium Manganate targets are offered in standard catalog sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard catalogue disc (1 in x 0.125 in)
99.9% (3N)
Infinita Materials IN-MnSr-01; benchtop and small-chamber R&D deposition, rapid turnaround
Standard catalogue disc (2 in x 0.25 in)
99.9% (3N)
Infinita Materials IN-MnSr-02; standard-format PVD/sputter systems, longer service life per run
High-purity grade
99.99% – 99.999% (4N-5N)
Reduced trace-metal contamination for magnetoresistive, spintronic, and multiferroic device research demanding low defect density
Large-format / custom
99.9% – 99.99%, custom on request
Round targets to 14 in diameter and rectangular/block formats to 32 in x 12 in for production-scale and pilot-line coaters
Bonded assembly
99.9% – 99.99%, custom on request
Indium- or elastomer-bonded to a copper backing plate for improved thermal transfer during high-power or long-duration sputtering runs.
Applications of Strontium Manganate
Sputtered films of Strontium Manganate support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Spintronics and oxide electronics
Antiferromagnetic spacer and exchange-coupling layers in manganite superlattices
Provides a well-defined, weakly magnetic Mn4+ perovskite layer for interfacial magnetism and exchange-bias studies
Multiferroics research
Strain-engineered ferroelectric/antiferromagnetic thin films on lattice-matched substrates
Cubic SrMnO3 develops a polar distortion under epitaxial strain, enabling single-phase multiferroic behaviour.
Oxide heterostructure/superlattice fabrication
Barrier and buffer layers between functional manganite or titanate films
Chemical and structural compatibility with related ABO3 perovskites yields atomically sharp interfaces
Academic and national-lab materials research
Model compound for colossal magnetoresistance and Mott-insulator physics
Serves as the undoped end-member reference for La1-xSrxMnO3 and related doped manganite systems
Sensor and magnetoresistive device prototyping
Active or buffer layers in prototype magnetic tunnel junctions and magnetoresistive stacks
Antiferromagnetic ordering and tunable conductivity support pinning layers and reference structures
Dielectric and gate-oxide studies
Thin-film gate dielectric layers for oxide-based CMOS-style device structures
High-density sputtered films provide the smooth, stoichiometric dielectric layers such structures require
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Strontium Manganate sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Strontium Manganate, SrMnO3
SrMnO₃ sputtering targets deposit thin films with specific electronic and magnetic properties for energy systems, sensors, and spintronics applications.
Yes, SrMnO₃ thin films can be engineered during the deposition process to achieve specific conductivity, magnetic properties, and thickness, depending on the application.
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