Gadolinium Cerium Oxide (GDC) sputtering targets from Infinita Materials deliver a fluorite-structured, oxygen-ion-conducting ceramic engineered for solid oxide fuel cell and thin-film electrolyte applications. Formulated as Gd0.2Ce0.8O2, these targets combine high ionic conductivity at intermediate temperatures with the chemical and thermal stability needed for demanding multilayer deposition processes.
Gadolinium Cerium Oxide (GDC) is a gadolinium-doped ceria ceramic in which Gd³⁺ substitutes for Ce⁴⁺ in the cubic fluorite CeO₂ lattice, creating oxygen vacancies that enable high oxygen-ion conductivity. Common compositions contain approximately 10–20 mol% Gd, with Gd₀.₂Ce₀.₈O₂ offering a strong balance of ionic conductivity and phase stability. GDC also provides excellent chemical stability and resistance to thermal cycling. As a sputtering target, dense ceramic GDC enables uniform, stoichiometric, sub-micron films with precise thickness control. Sputtered GDC is widely used in solid oxide fuel and electrolysis cells as electrolytes and diffusion barriers, particularly between YSZ and LSCF cathodes, as well as in gas sensors, oxide buffer layers, and high-temperature protective coatings.
Answer: Gadolinium Cerium Oxide (Gd₀.₂Ce₀.₈O₂), commonly known as GDC, has excellent ionic conductivity, high oxygen ion mobility, and good thermal stability. These qualities make it an attractive material for solid oxide fuel cells (SOFCs), oxygen sensors, and catalysis, all requiring ionic transport and thermal stability.
Answer: Thin films of Gd₀.₂Ce₀.₈O₂ are widely utilized in SOFCs, oxygen sensors, and electrochemical devices. GDC thin films are significant in intermediate-temperature SOFCs, where they serve as a solid electrolyte material due to their excellent ionic conductivity and resistance to reduction at high temperatures.
Answer: Gd₀.₂Ce₀.₈O₂ sputtering targets are compatible with various physical vapor deposition (PVD) techniques, including RF and DC magnetron sputtering. The choice of technique depends on the desired thin-film quality and application. RF sputtering is commonly used for materials like GDC to ensure uniform and dense films.
Answer: The main challenge in sputtering Gd₀.₂Ce₀.₈O₂ is maintaining the desired stoichiometry of the film, as the loss of oxygen during deposition can affect its ionic conductivity. Controlling the oxygen partial pressure throughout the sputtering process and post-deposition annealing can aid in achieving the desired phase and material parameters.
Answer: Gd₀.₂Ce₀.₈O₂ can be sputtered onto various substrates, including yttria-stabilized zirconia (YSZ), alumina and silicon, depending on the specific application. The choice of substrate influences the adhesion, microstructure, and crystallinity of the deposited GDC thin films, which are critical for applications like fuel cells and oxygen sensors.
Gadolinium Cerium Oxide (GDC) is a gadolinium-doped ceria ceramic in which Gd³⁺ substitutes for Ce⁴⁺ in the cubic fluorite CeO₂ lattice, creating oxygen vacancies that enable high oxygen-ion conductivity. Common compositions contain approximately 10–20 mol% Gd, with Gd₀.₂Ce₀.₈O₂ offering a strong balance of ionic conductivity and phase stability. GDC also provides excellent chemical stability and resistance to thermal cycling. As a sputtering target, dense ceramic GDC enables uniform, stoichiometric, sub-micron films with precise thickness control. Sputtered GDC is widely used in solid oxide fuel and electrolysis cells as electrolytes and diffusion barriers, particularly between YSZ and LSCF cathodes, as well as in gas sensors, oxide buffer layers, and high-temperature protective coatings.
Key Properties of Gadolinium Cerium Oxide
Property
Value
Significance
Chemical Formula
Gd0.2Ce0.8O2
Defines the 20 mol% gadolinium doping level and the Ce: Gd ratio that sets oxygen vacancy concentration and ionic conductivity
CAS Number
1306-38-3
Registry number of the CeO2 host lattice; used industry-wide as the practical identifier since doped-ceria solid solutions have no distinct CAS number of their own
Purity
99.9% – 99.99%
Higher purity grades limit alkali and transition-metal impurities that otherwise reduce ionic conductivity and increase film defects
Molar Mass
~175.54 g/mol
Calculated from standard atomic weights for the Gd0.2Ce0.8O2 formula unit; used for stoichiometry and deposition-rate calculations
Density (theoretical, sintered)
~7.2 g/cm3
Higher sintered density in the target correlates with lower porosity, reduced arcing, and more uniform sputter yield
Melting Point
~2,300 C
Reflects the high thermal stability of the fluorite oxide lattice, supporting stable operation under sustained magnetron sputtering power
Crystal Structure
Cubic fluorite (Fm-3m)
The same structure as undoped CeO2; gadolinium substitution expands the lattice slightly and creates the oxygen vacancies that enable ionic conduction
Oxygen-Ion Conductivity
~10^-2 S/cm at 500-700 C
Primary property exploited in SOFC and sensor films; peaks near 10-20 mol% Gd doping before falling off at higher dopant concentrations
Types & Grades of Gadolinium Cerium Oxide
Gadolinium Cerium Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard sputtering disc target
99.9%
General-purpose PVD thin-film deposition where cost efficiency matters more than trace-impurity control
High-purity target
99.99%
Reduced trace-metal content for SOFC electrolyte and barrier-layer films where impurities degrade ionic conductivity
Ultra-high-purity target
99.999%
Research-grade material for sensor development and fundamental studies of ionic transport in thin films
Bonded target assembly
99.9% – 99.99%
Indium- or elastomer-bonded to a backing plate for improved thermal management in high-power magnetron systems
Custom-doped composition (10-20 mol% Gd)
99.9% and above
Dopant level tailored between 10 and 20 mol% gadolinium to balance peak ionic conductivity against electronic leakage for a specific process
Applications of Gadolinium Cerium Oxide
Sputtered films of Gadolinium Cerium Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Solid oxide fuel cells (SOFC)
Thin-film electrolyte deposition
Provides oxygen-ion conduction at intermediate operating temperatures, improving efficiency versus higher-temperature YSZ-only designs
Solid oxide fuel cells (SOFC)
Diffusion barrier layer between YSZ electrolyte and LSCF-type cathode
Blocks strontium and zirconium interdiffusion that would otherwise form resistive interfacial phases and degrade long-term output
Solid oxide electrolysis cells (SOEC)
Electrolyte and barrier film deposition
Supports efficient, reversible oxygen-ion transport for hydrogen and syngas production
Gas and oxygen sensors
Sensing element thin films
Exploits mixed ionic-electronic conductivity that changes measurably with ambient oxygen partial pressure.
Semiconductor and microelectronics
Buffer and high-k dielectric layers
Lattice compatibility with fluorite and related oxides supports epitaxial buffer layers for functional oxide films.
Optical and protective coatings
Functional thin-film coatings
Chemical inertness and thermal stability suit coatings exposed to elevated temperature or reactive atmospheres
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Gadolinium Cerium Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Gadolinium Cerium Oxide, Gd0.2Ce0.8O2
Gadolinium Cerium Oxide (Gd₀.₂Ce₀.₈O₂), commonly known as GDC, has excellent ionic conductivity, high oxygen ion mobility, and good thermal stability. These qualities make it an attractive material for solid oxide fuel cells (SOFCs), oxygen sensors, and catalysis, all requiring ionic transport and thermal stability.
Thin films of Gd₀.₂Ce₀.₈O₂ are widely utilized in SOFCs, oxygen sensors, and electrochemical devices. GDC thin films are significant in intermediate-temperature SOFCs, where they serve as a solid electrolyte material due to their excellent ionic conductivity and resistance to reduction at high temperatures.
Gd₀.₂Ce₀.₈O₂ sputtering targets are compatible with various physical vapor deposition (PVD) techniques, including RF and DC magnetron sputtering. The choice of technique depends on the desired thin-film quality and application. RF sputtering is commonly used for materials like GDC to ensure uniform and dense films.
The main challenge in sputtering Gd₀.₂Ce₀.₈O₂ is maintaining the desired stoichiometry of the film, as the loss of oxygen during deposition can affect its ionic conductivity. Controlling the oxygen partial pressure throughout the sputtering process and post-deposition annealing can aid in achieving the desired phase and material parameters.
Gd₀.₂Ce₀.₈O₂ can be sputtered onto various substrates, including yttria-stabilized zirconia (YSZ), alumina and silicon, depending on the specific application. The choice of substrate influences the adhesion, microstructure, and crystallinity of the deposited GDC thin films, which are critical for applications like fuel cells and oxygen sensors.
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