| Catalogue Code | IN-Hf-01 IN-Hf-02 |
| CAS No. | 12055-23-1 |
| Chemical Formula | HfO2 |
| Compound Name | Hafnium Oxide |
| Purity (%) | >99.9 |
| Dimensions | Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25” |
Introduction
Hafnium oxide (HfO2) is a high-k dielectric material with unique properties and applications in thin-film deposition processes as a sputtering target. It has a high melting point (about 2,800°C) and exceptional chemical stability, making it ideal for high-temperature and high-performance applications. As a sputtering target, HfO2 offers enhanced electrical insulation, optical transparency, and resistance to radiation, which are critical for modern electronic devices. Due to its superior properties, HfO2 is widely used in applications requiring precision and reliability under demanding conditions.
Properties
The table below contains all the critical Hafnium oxide properties:
| Properties | Description |
| Appearance and Shape | Solid, Thin film, Disc |
| Molar mass | ~ 210.48 g/mol |
| Magnetic Type | Diamagnetic |
| Density | ~ 9.68 g/cm³ |
| Thermal conductivity | ~ 1.4 W/m·K at RT |
| Melting Point | ~ 2850 °C |
Applications
Hafnium oxide (HfO2) has many uses, including:
- Microelectronics: Hafnium oxide is a high-κ dielectric material used in gate insulators and thin film deposition. It’s used in field effect transistors instead of silicon dioxide.
- Optical coatings: Hafnium oxide thin films can be used in optical coatings for filters, beamsplitters, anti-reflection coatings, and high-reflectivity mirrors.
- Energy-efficient windows: Hafnium oxide thin films can make transparent and reflective heat mirrors in the visible and near-infrared.
- Computed tomography scans: Hafnium oxide can be used as a contrast material in computed tomography scans.
- Memory devices: Hafnium oxide can be used as a memory device because of its resistive switching behavior.
FAQs
Answere: HfO₂ sputtering targets are used in thin film deposition for semiconductor devices, optical coatings, and high-k dielectric layers in memory devices.
Answere: HfO₂ offers a high dielectric constant (high-k), excellent insulating properties, and good thermal stability, making it ideal for advanced semiconductor and memory technologies.
Answere: Hafnium oxide is sputtered using DC or RF sputtering techniques in a vacuum environment, depending on the target and substrate material, to create uniform thin films.
Answere: High purity, precise stoichiometry, and low defect density are essential for achieving high-quality, reliable thin films in electronic and optical applications.
Answere: Yes, HfO₂ targets can be customized in terms of purity, shape, and size to meet the specific requirements of different deposition processes or applications.
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