Indium Gallium Zinc Oxide (IGZO) sputtering targets are supplied by Infinita Materials in high-purity ceramic form for deposition of amorphous oxide semiconductor thin films used in thin-film transistor (TFT) backplanes. As the dominant channel material behind modern high-resolution LCD and OLED displays, IGZO combines electron mobility far exceeding amorphous silicon with the large-area uniformity and optical transparency that display and flexible-electronics manufacturers require.
IGZO (InGaZnO₄) is an amorphous, wide-bandgap n-type oxide semiconductor combining indium, gallium, and zinc oxides. Its amorphous structure retains relatively high electron mobility because indium-derived s-orbitals provide effective conduction pathways, while gallium controls oxygen vacancies and carrier concentration. As a sputtering target, IGZO enables precise, uniform composition and thickness control across large substrates. RF or pulsed-DC magnetron sputtering is widely used to deposit IGZO thin films for high-resolution LCD and AMOLED displays, where high mobility and low leakage enable smaller, faster TFTs. IGZO is also used in flexible and transparent electronics, oxide-semiconductor memory research, sensors, and emerging optoelectronic devices.
Answer: InGaZnOx sputtering targets are primarily used to create thin films for applications like transparent conductive films (TCF) in electronics, displays, and solar cells.
Answer: InGaZnOx offers high electrical conductivity, optical transparency, and stability, making it ideal for transparent electronic devices and displays.
Answer: InGaZnOx thin films are deposited using sputtering techniques, typically low to moderate power, with a reactive atmosphere of oxygen or argon-oxygen mixtures.
Answer: InGaZnOx targets generally provide good film uniformity, consistent composition, and performance across large areas, making them suitable for large-scale manufacturing.
Answer: Challenges include maintaining consistent target composition during sputtering and managing the target erosion rate to avoid non-uniformity in the deposited films.
IGZO (InGaZnO₄) is an amorphous, wide-bandgap n-type oxide semiconductor combining indium, gallium, and zinc oxides. Its amorphous structure retains relatively high electron mobility because indium-derived s-orbitals provide effective conduction pathways, while gallium controls oxygen vacancies and carrier concentration. As a sputtering target, IGZO enables precise, uniform composition and thickness control across large substrates. RF or pulsed-DC magnetron sputtering is widely used to deposit IGZO thin films for high-resolution LCD and AMOLED displays, where high mobility and low leakage enable smaller, faster TFTs. IGZO is also used in flexible and transparent electronics, oxide-semiconductor memory research, sensors, and emerging optoelectronic devices.
Key Properties of Indium Gallium Zinc Oxide
Property
Value
Significance
Chemical Formula
InGaZnO4 (1:1:1:4 In:Ga:Zn:O)
defines the amorphous oxide semiconductor stoichiometry used industry-wide for TFT channel layers
CAS Number
151248-91-8
unique identifier for procurement, safety documentation, and customs classification
Molar Mass
~313.92 g/mol
used for stoichiometric calculations and target mass/thickness yield estimates
Theoretical Density
~6.5 g/cm3
benchmark for sintered target density, which is normally reported as a percentage of this value
Structure
Amorphous, homologous InGaO3(ZnO) network
underlies IGZO’s uniform, defect-tolerant electronic behaviour across large substrate areas
Purity
99.9% – 99.99%
controls electron mobility, threshold-voltage stability, and film defect density
Electronic Character
Wide-bandgap (~3.0-3.5 eV) n-type semiconductor
enables high optical transparency combined with semiconducting channel behaviour
Thermal Conductivity
~10-15 W/m-K (composite oxide estimate)
informs sputtering power ramp rates and thermal-shock avoidance during deposition
Types & Grades of Indium Gallium Zinc Oxide
Indium Gallium Zinc Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard planar disc target
99.9%
Most common form for RF/DC magnetron sputtering of a-IGZO TFT channel layers in LCD/OLED backplanes
High-purity (4N) target
99.99%
Reduced metallic and particulate contamination for advanced display and low-leakage TFT production
Rotary/cylindrical target
99.9% – 99.99%
used on large-area in-line sputtering systems for Gen 8.5+ display fabs requiring high target utilisation
Bonded target (indium-bonded to Cu backing plate)
99.9% – 99.99%
improves thermal dissipation and mechanical stability for high-power, long-run production sputtering
tailored In:Ga:Zn ratios for research into mobility, stability, or bias-stress performance tuning
Applications of Indium Gallium Zinc Oxide
Sputtered films of Indium Gallium Zinc Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Flat-panel display manufacturing
a-IGZO TFT backplanes for LCD panels
provides a high-mobility channel layer enabling higher pixel density and faster refresh rates than a-Si
OLED display manufacturing
TFT backplanes for AMOLED smartphone and TV panels
supplies low leakage current and uniform switching needed for high-resolution, power-efficient pixel driving
Flexible and transparent electronics
channel layers for flexible/foldable display prototypes
offers low-temperature deposition compatibility and mechanical flexibility unattainable with polysilicon
Semiconductor R&D
thin-film transistor and memory research
serves as a benchmark amorphous oxide semiconductor for mobility, bias-stability, and reliability studies
Transparent electronics and sensing
transparent oxide semiconductor films
combines optical transparency with tunable electrical conductivity for sensor and photodetector layers
Photovoltaics
buffer and transport layers in thin-film solar cells
contributes a wide-bandgap transparent layer that improves light transmission to underlying absorber layers
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Indium Gallium Zinc Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Indium Gallium Zinc Oxide, InGaZnOx
InGaZnOx sputtering targets are primarily used to create thin films for applications like transparent conductive films (TCF) in electronics, displays, and solar cells.
InGaZnOx thin films are deposited using sputtering techniques, typically low to moderate power, with a reactive atmosphere of oxygen or argon-oxygen mixtures.
InGaZnOx targets generally provide good film uniformity, consistent composition, and performance across large areas, making them suitable for large-scale manufacturing.
Challenges include maintaining consistent target composition during sputtering and managing the target erosion rate to avoid non-uniformity in the deposited films.
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