Lanthanum aluminate (LaAlO3, LAO) is a rhombohedrally distorted perovskite oxide supplied as a high-density sputtering target by Infinita Materials for oxide electronics and thin-film substrate research. It is best known as the epitaxial partner in the LaAlO3/SrTiO3 heterostructure, whose interfacial two-dimensional electron gas is one of the most studied phenomena in modern oxide physics, and as a widely used single-crystal substrate for cuprate superconductor films.
Lanthanum aluminate (LaAlO₃) is a rhombohedrally distorted perovskite oxide with a wide bandgap, high dielectric constant, excellent chemical stability, and non-magnetic character. Its pseudocubic lattice makes it well suited for integration with other functional perovskite oxides. As a sputtering target, LaAlO₃ provides controlled La: Al:O stoichiometry from a single dense ceramic source, enabling uniform and reproducible thin films. RF and pulsed-DC magnetron sputtering are used to deposit LaAlO₃ buffer, template, and dielectric layers for oxide electronics, superconducting films, and correlated-oxide heterostructures. Sputtered films also provide a scalable alternative to costly bulk LaAlO₃ substrates for larger-area applications.
Answer: LaAlO₃ sputtering targets are used to produce thin films for semiconductor devices, piezoelectric materials, and high-k dielectrics and as substrates for epitaxial growth in advanced electronic and optoelectronic devices.
Answer: LaAlO₃ sputtering targets have a high melting point (~1,800°C), good thermal stability, non-magnetic properties, and a relatively low thermal conductivity (~10 W/m·K), making them suitable for high-performance applications.
Answer: LaAlO₃ is widely used as a substrate for epitaxial thin film growth due to its lattice structure compatibility with various oxide films and its excellent ability to support high-quality, defect-free film growth.
Answer: While LaAlO₃ sputtering targets are ideal for many oxide-based thin film applications, their use is most beneficial in processes that require high thermal stability, non-magnetic behavior, and the ability to produce films for advanced electronic and optoelectronic devices.
Lanthanum aluminate (LaAlO₃) is a rhombohedrally distorted perovskite oxide with a wide bandgap, high dielectric constant, excellent chemical stability, and non-magnetic character. Its pseudocubic lattice makes it well suited for integration with other functional perovskite oxides. As a sputtering target, LaAlO₃ provides controlled La: Al:O stoichiometry from a single dense ceramic source, enabling uniform and reproducible thin films. RF and pulsed-DC magnetron sputtering are used to deposit LaAlO₃ buffer, template, and dielectric layers for oxide electronics, superconducting films, and correlated-oxide heterostructures. Sputtered films also provide a scalable alternative to costly bulk LaAlO₃ substrates for larger-area applications.
Key Properties of Lanthanum Aluminate
Property
Value
Significance
Chemical formula
LaAlO3
Defines the ABO3 perovskite stoichiometry with La3+ at the A site and Al3+ at the B site
Crystal structure
Rhombohedral perovskite, space group R-3c (pseudocubic), transitioning to cubic Pm-3m near 435 C
Octahedral tilting below the transition sets twin domain formation, an important consideration for substrate applications
Molar mass
~213.89 g/mol
Used for stoichiometric mass-balance calculations in target fabrication and deposited-film thickness modelling
Density (theoretical)
~6.52 g/cm3
High target density supports stable erosion behaviour and reduces particulate generation during sputtering
Melting point
~2080 C
High thermal stability sets the sintering and hot-pressing window and supports sustained high-power sputtering without decomposition
Dielectric constant
~25 (relative permittivity)
Basis for early interest in LaAlO3 as a high-k dielectric and for its continued use as an insulating buffer layer
Thermal conductivity
~10 W/m-K
Moderate value that informs power ramp rates and thermal management during magnetron sputtering
Chemical stability
Non-magnetic, chemically inert oxide; reactive with silicon only above roughly 1000 C
Supports congruent, stoichiometric material transfer from target to substrate under normal sputtering conditions
Types & Grades of Lanthanum Aluminate
Lanthanum Aluminate targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard ceramic disc target
99.9% (3N)
Cost-effective grade for general PVD process development and pilot-line coating runs
High-purity ceramic target
99.99% (4N)
Reduced trace-metal content for dielectric and oxide-electronics thin-film work sensitive to contamination
Ultra-high-purity target, custom order
99.999% (5N)
Minimises impurity-driven scattering and defect states for fundamental LAO/STO interface and correlated-oxide research
Bonded target assembly
99.9% and above
Indium- or silver-bonded to a copper backing plate for improved heat removal in high-power magnetron sputtering
Custom geometry (rectangular, planar, or rotary tube)
99.9%-99.99%
Sized for large-area, in-line, or roll-to-roll deposition systems beyond standard disc formats
Applications of Lanthanum Aluminate
Sputtered films of Lanthanum Aluminate support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Oxide electronics research
LaAlO3/SrTiO3 interface and related heterostructure films
Deposits the LAO layer whose interface with SrTiO3 hosts a conductive two-dimensional electron gas studied for novel electronic devices
Superconducting films
Buffer and template layers beneath YBCO and other cuprate superconductor films
Provides a lattice-compatible insulating underlayer that supports epitaxial growth of high-Tc superconducting oxides
Microelectronics and semiconductor
High-k dielectric and insulating buffer coatings
Supplies a dense, chemically stable perovskite dielectric layer for oxide-compatible device stacks
Optics and photonics
High-refractive-index oxide coatings
Delivers a dense, uniform LaAlO3 film layer for refractive-index engineering in optical stacks
Condensed-matter and academic research
Epitaxial thin films and superlattices for interfacial physics studies
Enables controlled study of two-dimensional electron gases, magnetism, and superconductivity at oxide interfaces
Sensors and functional coatings
Thin-film resistive and chemically stable protective layers
Chemically inert, hard oxide film resists degradation in sensing and protective coating applications
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lanthanum Aluminate sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Lanthanum Aluminate, LaAlO3
LaAlO₃ sputtering targets are used to produce thin films for semiconductor devices, piezoelectric materials, and high-k dielectrics and as substrates for epitaxial growth in advanced electronic and optoelectronic devices.
LaAlO₃ sputtering targets have a high melting point (~1,800°C), good thermal stability, non-magnetic properties, and a relatively low thermal conductivity (~10 W/m·K), making them suitable for high-performance applications.
LaAlO₃ is widely used as a substrate for epitaxial thin film growth due to its lattice structure compatibility with various oxide films and its excellent ability to support high-quality, defect-free film growth.
While LaAlO₃ sputtering targets are ideal for many oxide-based thin film applications, their use is most beneficial in processes that require high thermal stability, non-magnetic behavior, and the ability to produce films for advanced electronic and optoelectronic devices.
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