Magnesium Zinc Oxide [Mg(₁₋ₓ)ZnₓO] – Supplier & Manufacturer in USA

Magnesium Zinc Oxide,Mg_{(1-x)_{Zn_xO}}

Magnesium zinc oxide (MgxZn1-xO) is a wurtzite oxide alloy in which magnesium substitutes for zinc in the ZnO lattice, producing a wide-bandgap semiconductor whose optical absorption edge can be tuned from the near-UV of pure ZnO out past 4 eV as the magnesium fraction increases. Supplied by Infinita Materials as sputtering targets, the material lets thin-film engineers dial in bandgap and lattice parameter within a single oxide chemistry rather than switching material systems. Targets are produced as dense, phase-controlled ceramic discs, rectangles, and custom-format blocks suited to RF and RF/DC-pulsed magnetron deposition.

Purity (%) :	>99.9
Dimensions :	Dia. 2”, Thick. 0.25”

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Introduction to Magnesium Zinc Oxide

Magnesium Zinc Oxide MgₓZn₁₋ₓO is a wurtzite ZnO-based solid solution in which Mg²⁺ substitutes for Zn²⁺, producing a controlled lattice contraction and widening the bandgap from approximately 3.3 eV toward 4.0–4.4 eV. Higher Mg concentrations can promote secondary cubic MgO phases, making composition control essential for maintaining single-phase films. Because its properties vary continuously with Mg content, pre-alloyed ceramic sputtering targets provide uniform and reproducible Mg incorporation across large substrates. Sputtered MgZnO films are used as high-bandgap barriers and cladding layers in UV LEDs and photodetectors, as buffer and gate-dielectric layers in oxide electronics, and as transparent, lattice-compatible confining layers in ZnO-based heterostructures.

FAQs

Question: What is the significance of the purity of Mg₁₋ₓZₓO sputter targets?

Answer: High-purity Mg1–xZxO sputter targets provide reliable coating films with fewer impurities so that the coated films have better performances. These targets are necessary where high precision and dependability are crucial, for example, for photovoltaic cells or elaborate electronics.

Question: What industries use Mg₁₋ₓZₓO sputter targets?

Answer: Mg₁₋ₓZₓO sputter targets are widely used in electronics and energy, optoelectronics, automotive, and aerospace industries. These materials fabricate several devices, including solar panels, smart windows, LEDs, displays, and thin-film transistors.

Question: What are the key challenges in using Mg₁₋ₓZₓO sputter targets?

Answer: Some challenges include accurately controlling the thickness and uniformity of the deposited films and ensuring consistency in the material composition, particularly the correct ratio of magnesium to zinc. However, these issues can be avoided by using the proper sputtering parameters during the deposition process.

Question: Should I use RF or DC sputtering for a MgxZn1-xO target?

Answer: Because MgZnO is a semi-insulating to insulating oxide, RF magnetron sputtering is the default choice; lower-x, more zinc-rich compositions retain enough conductivity that RF/DC-pulsed sputtering can also be used, and Infinita Materials can advise on the best fit for a given composition and tool.

Introduction to Magnesium Zinc Oxide

Property	Value	Significance
Crystal structure	Wurtzite (hexagonal), isostructural with ZnO up to the single-phase Mg solubility limit	Enables low-defect epitaxy on ZnO and sapphire substrates without a structural phase change
Bandgap	~3.3 eV to 4.0-4.4 eV, continuously tunable with Mg fraction x	Allows engineered UV absorption/emission cutoff for optoelectronic layer design
Lattice constants (low-x)	a ~ 3.249 A, c ~ 5.206 A	Close match to ZnO’s lattice reduces strain and defect density in heterostructures
Electrical resistivity	Semi-insulating to insulating; increases with rising Mg content	Determines whether RF or DC/RF-pulsed sputtering is required for a given composition
Optical transmittance	>80% typical in the visible range, tunable UV absorption edge	Supports transparent-electrode and UV-transparent window layer applications
Thermal conductivity	Moderate to high, varies with composition and film density	Affects thermal budget and shock resistance of the target during sputtering
Constituent oxide melting points	ZnO ~1975 C; MgO ~2852 C	Informs target sintering temperature and high-temperature phase stability
Sputtering behavior	Dense, phase-controlled ceramic; largely non-conductive to weakly conductive target	Favours RF magnetron sputtering, with RF/DC-pulsed options for lower-x, more conductive compositions

Property

Value

Significance

Crystal structure

Wurtzite (hexagonal), isostructural with ZnO up to the single-phase Mg solubility limit

Enables low-defect epitaxy on ZnO and sapphire substrates without a structural phase change

Bandgap

~3.3 eV to 4.0-4.4 eV, continuously tunable with Mg fraction x

Allows engineered UV absorption/emission cutoff for optoelectronic layer design

Lattice constants (low-x)

a ~ 3.249 A, c ~ 5.206 A

Close match to ZnO’s lattice reduces strain and defect density in heterostructures

Electrical resistivity

Semi-insulating to insulating; increases with rising Mg content

Determines whether RF or DC/RF-pulsed sputtering is required for a given composition

Optical transmittance

>80% typical in the visible range, tunable UV absorption edge

Supports transparent-electrode and UV-transparent window layer applications

Thermal conductivity

Moderate to high, varies with composition and film density

Affects thermal budget and shock resistance of the target during sputtering

Constituent oxide melting points

ZnO ~1975 C; MgO ~2852 C

Informs target sintering temperature and high-temperature phase stability

Sputtering behavior

Dense, phase-controlled ceramic; largely non-conductive to weakly conductive target

Favours RF magnetron sputtering, with RF/DC-pulsed options for lower-x, more conductive compositions

Grade / Form	Typical Purity	Key Features / Uses
Standard catalogue disc (IN-MgZn-02)	>99.9%	2in diameter x 0.25in thick, in-stock format for R&D-scale deposition and process development
High-purity optoelectronic grade	99.99% – 99.995%	Reduced trace-metal content for UV LED, photodetector, and heterostructure device films
Large-format / custom	99.9% – 99.99%	Rectangular blocks and planar tiles sized for production magnetron sputtering systems
Bonded assembly	99.9% and above	Indium- or elastomer-bonded to a copper backing plate for higher-power RF/DC-pulsed sputtering
Research / PLD-scale target	99.995%	1 in- 2 in discs formatted for pulsed laser deposition and small-chamber lab sputtering

Grade / Form

Typical Purity

Key Features / Uses

Standard catalogue disc (IN-MgZn-02)

>99.9%

2in diameter x 0.25in thick, in-stock format for R&D-scale deposition and process development

High-purity optoelectronic grade

99.99% – 99.995%

Reduced trace-metal content for UV LED, photodetector, and heterostructure device films

Large-format / custom

99.9% – 99.99%

Rectangular blocks and planar tiles sized for production magnetron sputtering systems

Bonded assembly

99.9% and above

Indium- or elastomer-bonded to a copper backing plate for higher-power RF/DC-pulsed sputtering

Research / PLD-scale target

99.995%

1 in- 2 in discs formatted for pulsed laser deposition and small-chamber lab sputtering

Industry	Application	Function
Optoelectronics	UV LEDs and photodetectors	Bandgap-engineered barrier and active layers confine carriers around ZnO-based emitters
Display and transparent electronics	Transparent conducting and buffer layers	Wide-bandgap, high-transmittance layers paired with ZnO-based TCO films
Oxide semiconductor devices	Gate dielectric and passivation layers	High-bandgap oxide film provides insulating, chemically compatible dielectric layers.
Photovoltaics	Buffer and window layers in thin-film solar cells	Tunable bandgap improves carrier collection and reduces optical losses at the junction.
Piezoelectric and MEMS	Piezoelectric and acoustic thin films	Mg alloying adjusts piezoelectric coefficient and mechanical properties of ZnO-based films.
Academic and materials research	Epitaxial ZnO/MgZnO heterostructures	Used to study bandgap engineering, quantum confinement, and UV emission in oxide heterostructures

Industry

Application

Function

Optoelectronics

UV LEDs and photodetectors

Bandgap-engineered barrier and active layers confine carriers around ZnO-based emitters

Display and transparent electronics

Transparent conducting and buffer layers

Wide-bandgap, high-transmittance layers paired with ZnO-based TCO films

Oxide semiconductor devices

Gate dielectric and passivation layers

High-bandgap oxide film provides insulating, chemically compatible dielectric layers.