Neodymium Nickel Oxide (NdNiO₃) – Supplier & Manufacturer in USA

Neodymium Nickel Oxide, NdNiO₃

Neodymium Nickel Oxide (NdNiO3) is a rare-earth perovskite ceramic best known for its sharp, temperature-driven metal-insulator transition, placing it among the correlated-electron oxides of growing interest for Mott electronics and neuromorphic devices. Infinita Materials supplies NdNiO3 as a high-density sputtering target engineered for reproducible thin-film deposition of this functional oxide. The target is formulated to preserve the stoichiometric Nd: Ni:O ratio that governs the material’s electronic switching behaviour, supporting film growth for both academic correlated-electron research and emerging oxide-electronics device work.

Purity (%) :	>99.9
Dimensions :	Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25”

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Introduction to Neodymium Nickel Oxide

Neodymium Nickel Oxide NdNiO₃ crystallises in a distorted orthorhombic perovskite structure (Pnma), featuring corner-sharing NiO₆ octahedra and Nd³⁺ ions at the A-sites. Its strongly correlated electronic behaviour produces a sharp metal-insulator transition near 200 K, accompanied by antiferromagnetic ordering and Ni-site bond disproportionation. This transition is highly sensitive to oxygen stoichiometry, composition, thickness, and epitaxial strain, making NdNiO₃ valuable for tunable oxide electronics. RF magnetron sputtering from dense ceramic targets enables controlled cation composition and oxygen content. Epitaxial NdNiO₃ films are investigated for Mott transistors, resistive-switching memories, neuromorphic devices, correlated-electron heterostructures, and mixed ionic-electronic conductor applications, including solid-oxide electrochemical systems.

FAQs

Question: What is NdNiO3 used for in sputtering?

Answer: NdNiO3 is a target material for depositing thin films with unique electrical and optical properties, often in applications like sensors, devices for energy conversion, and thin-film transistors.

Question: What are the advantages of using NdNiO3 in sputtering?

Answer: NdNiO3 films exhibit high conductivity and can be used in oxygen-rich environments, making them suitable for oxide electronics and other high-performance applications.

Question: What is the ideal sputtering technique for NdNiO3?

Answer: Reactive sputtering, which involves oxygen gas to create oxide films while maintaining control over the stoichiometry, is typically used.

Question: Can NdNiO3 be deposited on various substrates?

Answer: NdNiO3 can be deposited on various substrates, such as silicon, glass, or sapphire, though the choice of substrate may influence film quality and properties.

Question: Are there any challenges with sputtering NdNiO3?

Answer: Maintaining proper oxygen partial pressure and managing stoichiometry during deposition is crucial for achieving high-quality NdNiO3 films without defects.

Introduction to Neodymium Nickel Oxide

Property	Value	Significance
Crystal structure	Orthorhombic perovskite, space group Pnma	Distorted GdFeO3-type lattice whose NiO6 octahedral tilt underlies the tunable electronic transition
Molar mass	~250.93 g/mol	Basis for stoichiometric flux and film-thickness calculations during sputter deposition
Density (theoretical)	~7.55 g/cm3	Benchmark for target sintering density; higher-density targets reduce arcing and particulate generation
Metal-insulator transition temperature	~200 K (~-73 C)	Sharp first-order transition is the material’s defining functional property for Mott-electronics use.
Magnetic ordering	Antiferromagnetic below ~200 K; paramagnetic above	Magnetic and electronic transitions occur together, a distinguishing trait among rare-earth nickelates
Electrical conductivity	Correlated metal above MIT, insulating below; mixed ionic-electronic conductor	Enables use as a resistive-switching layer and as an SOEC/SOFC electrode material
Thermal conductivity	~6.1 W/m-K	Relevant to thermal load management and cooling design during magnetron sputtering
Melting/decomposition point	~2000 C (decomposes with O2 loss prior to congruent melting)	Governs target fabrication conditions such as hot-press sintering temperature and atmosphere

Property

Value

Significance

Crystal structure

Orthorhombic perovskite, space group Pnma

Distorted GdFeO3-type lattice whose NiO6 octahedral tilt underlies the tunable electronic transition

Molar mass

~250.93 g/mol

Basis for stoichiometric flux and film-thickness calculations during sputter deposition

Density (theoretical)

~7.55 g/cm3

Benchmark for target sintering density; higher-density targets reduce arcing and particulate generation

Metal-insulator transition temperature

~200 K (~-73 C)

Sharp first-order transition is the material’s defining functional property for Mott-electronics use.

Magnetic ordering

Antiferromagnetic below ~200 K; paramagnetic above

Magnetic and electronic transitions occur together, a distinguishing trait among rare-earth nickelates

Electrical conductivity

Correlated metal above MIT, insulating below; mixed ionic-electronic conductor

Enables use as a resistive-switching layer and as an SOEC/SOFC electrode material

Thermal conductivity

~6.1 W/m-K

Relevant to thermal load management and cooling design during magnetron sputtering

Melting/decomposition point

~2000 C (decomposes with O2 loss prior to congruent melting)

Governs target fabrication conditions such as hot-press sintering temperature and atmosphere

Grade / Form	Typical Purity	Key Features / Uses
Standard catalogue disc (IN-NdNi-01 / IN-NdNi-02)	>99.9%	1in x 0.125in and 2in x 0.25in stock discs for rapid deployment in R&D sputtering systems
High-purity research grade	99.99%	Reduced trace-metal contamination for metal-insulator-transition and neuromorphic device studies
Ultra-high purity grade	99.999% (5N)	For correlated-electron and Mott-transistor research requiring minimal defect scattering
Large-format / custom target	>99.9% – 99.99%, custom on request	Extended diameters and rectangular plates sized for pilot-line and production coaters
Bonded backing-plate assembly	>99.9% – 99.99%	Indium- or elastomer-bonded to a copper backing plate for enhanced heat removal in high-power RF sputtering

Grade / Form

Typical Purity

Key Features / Uses

Standard catalogue disc (IN-NdNi-01 / IN-NdNi-02)

>99.9%

1in x 0.125in and 2in x 0.25in stock discs for rapid deployment in R&D sputtering systems

High-purity research grade

99.99%

Reduced trace-metal contamination for metal-insulator-transition and neuromorphic device studies

Ultra-high purity grade

99.999% (5N)

For correlated-electron and Mott-transistor research requiring minimal defect scattering

Large-format / custom target

>99.9% – 99.99%, custom on request

Extended diameters and rectangular plates sized for pilot-line and production coaters

Bonded backing-plate assembly

>99.9% – 99.99%

Indium- or elastomer-bonded to a copper backing plate for enhanced heat removal in high-power RF sputtering

Industry	Application	Function
Semiconductor/oxide electronics	Mott field-effect transistors and neuromorphic synaptic devices	Exploits the sharp MIT for resistive switching and synaptic weight modulation
Data storage/memory	Resistive random-access memory (ReRAM)	Functional oxide layer providing abrupt, repeatable resistance switching
Sensing	Thermal/IR bolometers and electric-field sensors	MIT-driven resistivity change used directly as the sensing mechanism
Clean energy	Solid oxide electrolyser and fuel cell electrodes	Mixed ionic-electronic conduction supports oxygen reduction/evolution reactions.
Academic / correlated-electron research	Epitaxial heterostructures on LaAlO3, SrTiO3, and NdGaO3 substrates	Model system for studying strain- and interface-tuned metal-insulator physics
Photonics / smart coatings	Thermochromic and electronically switchable optical coatings	Reversible electronic transition modulates infrared transmittance and reflectivity

Industry

Application

Function

Semiconductor/oxide electronics

Mott field-effect transistors and neuromorphic synaptic devices

Exploits the sharp MIT for resistive switching and synaptic weight modulation

Data storage/memory

Resistive random-access memory (ReRAM)

Functional oxide layer providing abrupt, repeatable resistance switching

Sensing

Thermal/IR bolometers and electric-field sensors

MIT-driven resistivity change used directly as the sensing mechanism