Indium iron oxide (InFe2O4) sputtering targets from Infinita Materials deliver a dense, stoichiometric mixed-valence oxide ceramic for physical vapour deposition of iron-indium oxide thin films. Supplied as precision-machined discs and plates in purities from 99.9% to 99.999%, these targets serve materials-physics, spintronics, and functional-oxide research programs that need reproducible, contamination-controlled film composition.
Indium ferrite (InFe₂O₄) crystallises in a layered hexagonal/rhombohedral structure with mixed-valence Fe²⁺/Fe³⁺ ions arranged on triangular lattices, producing geometric frustration, charge ordering, and complex magnetic behaviour. As a sputtering target, InFe₂O₄ provides controlled 1:2:4 In: Fe:O stoichiometry that is difficult to maintain through separate-source deposition. Pre-reacted ceramic targets enable uniform, compositionally stable films for research into multiferroic coupling, frustrated magnetism, charge ordering, and mixed-valence transport. RF or reactive magnetron sputtering can produce epitaxial or polycrystalline InFe₂O₄ films for functional-oxide heterostructures, exploratory photoelectrodes, and emerging magnetic or electronic device concepts requiring precise iron-indium oxide composition.
Answer: InFe₂O₄ films are commonly used in gas sensors to detect gases like carbon monoxide (CO) and nitrogen dioxide (NO₂) with high sensitivity and selectivity.
Answer: InFe₂O₄ sputter targets help create thin films, which are used as transparent conductive coatings, magnetic sensors, spintronic devices, gas sensors, and energy storage devices.
Answer: The deposition rate varies depending on sputtering conditions (e.g., power, pressure, and target-substrate distance) but typically ranges from 0.1 to 1 micron per hour.
Answer: No. InFe2O4 and InFeO3 are distinct phases within the In-Fe-O system: InFe2O4 adopts the hexagonal YbFe2O4-type structure with mixed-valence Fe2+/Fe3+ triangular layers, while InFeO3 is a separate perovskite-related orthoferrite phase; the two should not be used interchangeably in specifications.
Indium ferrite (InFe₂O₄) crystallises in a layered hexagonal/rhombohedral structure with mixed-valence Fe²⁺/Fe³⁺ ions arranged on triangular lattices, producing geometric frustration, charge ordering, and complex magnetic behaviour. As a sputtering target, InFe₂O₄ provides controlled 1:2:4 In: Fe:O stoichiometry that is difficult to maintain through separate-source deposition. Pre-reacted ceramic targets enable uniform, compositionally stable films for research into multiferroic coupling, frustrated magnetism, charge ordering, and mixed-valence transport. RF or reactive magnetron sputtering can produce epitaxial or polycrystalline InFe₂O₄ films for functional-oxide heterostructures, exploratory photoelectrodes, and emerging magnetic or electronic device concepts requiring precise iron-indium oxide composition.
Key Properties of Indium Iron Oxide
Property
Value
Significance
Chemical formula
InFe2O4
Defines the fixed In: Fe:O stoichiometry that the target reproduces in the deposited film
Molar mass
~290.50 g/mol
Basis for stoichiometric calculations, deposition-rate estimates, and target mass accounting
CAS number
Not established
No single registry number could be verified across authoritative chemical sources; flag before use in regulatory or import paperwork.
Crystal structure
Hexagonal/rhombohedral, YbFe2O4-type (space group R-3m), triangular In/Fe cation layers
Underlies the charge-ordering and geometric magnetic frustration exploited in device research
Density (typical)
~5.7 g/cm3
Used to estimate sputter yield, deposition rate, and target service life
Melting behavior
>1300 C (incongruent, typical of mixed-valence oxides)
Sets the sintering and hot-press temperature window during target fabrication
Electronic/magnetic character
Mixed-valence Fe2+/Fe3+ triangular-lattice antiferromagnet with reported charge-ordering transition
Basis for multiferroic, magnetoelectric, and spin-frustration thin-film research
Appearance
Reddish-brown to black dense sintered ceramic disc
Visual indicator of oxidation state and oxygen stoichiometry during incoming inspection
Types & Grades of Indium Iron Oxide
Indium Iron Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard grade (3N)
99.9%
Cost-effective choice for exploratory RF/DC magnetron sputtering runs
High-purity grade (4N)
99.99%
Reduced trace-metal content for magnetic and electronic thin-film research
Ultra-high-purity grade (5N)
99.999%
Minimal magnetic impurity scattering for sensitive multiferroic and spintronic device work
Bonded/segmented target
99.9% and higher
Large-area or rotary-cathode-compatible construction for pilot-scale coating lines
Pre-sinter powder/evaporation grade
99.9% – 99.99%
Feedstock for custom target pressing or thermal/e-beam evaporation trials
Applications of Indium Iron Oxide
Sputtered films of Indium Iron Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Condensed matter and materials physics research
Triangular-lattice antiferromagnet and charge-ordering studies
Enables epitaxial or polycrystalline InFe2O4 film growth for probing magnetic frustration and electronic ordering
Spintronics R&D
Magnetic oxide thin-film and heterostructure fabrication
Supplies a ferrimagnetic/canted-spin functional layer for prototype spin-based devices
Photoelectrochemistry and renewable energy research
Iron-indium oxide photoelectrode thin films for water splitting
Provides a visible/UV-absorbing oxide layer consistent with reported In-Fe-O photoelectrode superlattices
Semiconductor and display R&D
Comparative functional-oxide and transparent-electrode studies
Serves as an iron-containing alternative oxide for benchmarking against conventional TCO systems
Sensor development
Chemiresistive and resistive-switching thin films
Mixed-valence Fe2+/Fe3+ redox chemistry supports gas-sensing and switching response.
Academic and national-lab thin-film facilities
General PVD/RF magnetron sputtering target supply
Enables reproducible, stoichiometric oxide film deposition for fundamental and applied studies
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Indium Iron Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Indium Iron Oxide, InFe2O4
InFe₂O₄ films are commonly used in gas sensors to detect gases like carbon monoxide (CO) and nitrogen dioxide (NO₂) with high sensitivity and selectivity.
InFe₂O₄ sputter targets help create thin films, which are used as transparent conductive coatings, magnetic sensors, spintronic devices, gas sensors, and energy storage devices.
The deposition rate varies depending on sputtering conditions (e.g., power, pressure, and target-substrate distance) but typically ranges from 0.1 to 1 micron per hour.
No. InFe2O4 and InFeO3 are distinct phases within the In-Fe-O system: InFe2O4 adopts the hexagonal YbFe2O4-type structure with mixed-valence Fe2+/Fe3+ triangular layers, while InFeO3 is a separate perovskite-related orthoferrite phase; the two should not be used interchangeably in specifications.
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