Indium Molybdenum Oxide (IMO) sputtering targets a molybdenum-doped indium(III) oxide ceramic engineered for high-mobility transparent conducting oxide (TCO) thin films. Formulated at the industry-standard In2O3/Mo 98/2 wt% ratio and offered at greater than 99.9% purity, these targets are supplied as sintered discs and plates for DC, RF, and pulsed-DC magnetron sputtering. IMO is studied and increasingly adopted as a lower-resistivity, higher-mobility alternative to indium tin oxide (ITO) in display, photovoltaic, and flexible-electronics applications.
Indium molybdenum oxide (IMO) is a doped In₂O₃-based transparent conducting oxide in which molybdenum acts as an electron donor, enabling high carrier concentrations while retaining the host’s wide bandgap and visible transparency. Compared with conventional ITO, IMO can provide high electron mobility and low sheet resistance at reduced film thickness. As a sputtering target, IMO enables uniform, adherent transparent conductive films with precise thickness and composition control across large substrates. DC, RF, or pulsed-DC magnetron sputtering is used to deposit IMO films for transparent electrodes in displays, thin-film photovoltaics, and semiconductor devices, particularly where thinner, highly conductive alternatives to ITO are desired.
Answer: The high purity of In₂O₃/Mo sputter targets ensures minimal impurities in the deposited films and contributes to higher-quality, more reliable films with consistent electrical and optical properties.
Answer: Industries such as electronics, photovoltaics, optoelectronics, and display manufacturing benefit from In₂O₃/Mo sputter targets, especially for applications requiring transparent conductive coatings.
Answer: Both RF and DC, including pulsed-DC, sputtering are used industrially. DC sputtering is generally preferred for its higher deposition rate on sufficiently conductive sintered IMO targets.
Indium molybdenum oxide (IMO) is a doped In₂O₃-based transparent conducting oxide in which molybdenum acts as an electron donor, enabling high carrier concentrations while retaining the host’s wide bandgap and visible transparency. Compared with conventional ITO, IMO can provide high electron mobility and low sheet resistance at reduced film thickness. As a sputtering target, IMO enables uniform, adherent transparent conductive films with precise thickness and composition control across large substrates. DC, RF, or pulsed-DC magnetron sputtering is used to deposit IMO films for transparent electrodes in displays, thin-film photovoltaics, and semiconductor devices, particularly where thinner, highly conductive alternatives to ITO are desired.
Key Properties of Indium Molybdenum Oxide
Property
Value
Significance
Crystal structure
Cubic bixbyite In2O3 host lattice with Mo6+ substitutional/interstitial doping
Preserves the wide-bandgap transparency of In2O3 while introducing shallow donor states for conduction
Carrier concentration
~1e20 to 1e21 cm-3 in optimized films
Sets the achievable conductivity without excessive free-carrier optical absorption
Electrical resistivity
As low as ~2-4 x 10^-4 ohm-cm in optimized thin films
Comparable to or lower than standard ITO, enabling thinner conductive layers
Hall mobility
Up to ~50-75 cm2/V-s reported in literature
Higher mobility than tin-doped In2O3 permits lower resistivity at reduced carrier density
Optical transmittance
>85% average in the visible range for thin films
Suits transparent electrode roles in displays and photovoltaic front contacts
Work function
~4.7-5.0 eV, tunable with processing
Reasonable energy-level match for charge injection into adjacent semiconductor or organic layers
Melting point
~1500 C (approximate, condition-dependent)
Confirms suitability for high-temperature sintering and typical sputtering thermal loads
Sintered relative density
Typically >90% to >99% of theoretical
Denser targets reduce particulate generation, nodule formation, and arcing during sputtering.
Types & Grades of Indium Molybdenum Oxide
Indium Molybdenum Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard-grade IMO target (In2O3/Mo 98/2 wt%)
99.9%
Cost-effective grade for general R&D-scale TCO film development
High-purity IMO target
99.99%
Lower metallic impurity content for more stable DC/RF sputtering and display-grade films
Ultra-high-purity IMO target
99.999%
Used for research into high-mobility TCOs and low-emissivity or photovoltaic device stacks
Custom-doped In2O3/Mo target
99.9%+
Alternate Mo loadings (e.g. 95/5 or 97/3 wt%) tune carrier density and resistivity for specific processes
Bonded/segmented large-area IMO target
99.9-99.99%
Indium- or elastomer-bonded to backing plates for large-area, in-line, or rotatable deposition systems
Applications of Indium Molybdenum Oxide
Sputtered films of Indium Molybdenum Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Flat-panel display manufacturing
Transparent pixel electrodes for TFT-LCD and AMOLED backplanes
Provides a low-resistivity, high-mobility transparent conducting layer as an alternative or supplement to ITO
Photovoltaics
Front transparent conducting window layer for thin-film and heterojunction solar cells
Reduces free-carrier optical absorption relative to conventional ITO, improving light throughput to the absorber
Touch panel and flexible electronics
Transparent conductive films on flexible plastic or glass substrates
Higher carrier mobility allows thinner films that better tolerate mechanical bending stress
Architectural and automotive glazing
Low-emissivity and smart-window coatings
Transmits visible light while its tunable carrier density supports infrared reflection or modulation
Optoelectronics and gas sensing
Transparent electrode or active layer in oxide-semiconductor sensor devices
Combines electrical conductivity, optical transparency, and chemical stability in one layer
Semiconductor and materials R&D
Benchmark material in ITO-alternative and amorphous oxide semiconductor studies
Serves as a reference high-mobility TCO for evaluating thinner, more efficient transparent electrodes
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Indium Molybdenum Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Indium Molybdenum Oxide, In2O3/Mo 98/2 wt%
The high purity of In₂O₃/Mo sputter targets ensures minimal impurities in the deposited films and contributes to higher-quality, more reliable films with consistent electrical and optical properties.
Industries such as electronics, photovoltaics, optoelectronics, and display manufacturing benefit from In₂O₃/Mo sputter targets, especially for applications requiring transparent conductive coatings.
Both RF and DC, including pulsed-DC, sputtering are used industrially. DC sputtering is generally preferred for its higher deposition rate on sufficiently conductive sintered IMO targets.
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