Lanthanum ferrite (LaFeO3) sputtering targets from Infinita Materials provide high-purity, single-phase perovskite source material for depositing thin films used in gas sensing, solid oxide fuel cell components, and photocatalytic and electrode layers. As an antiferromagnetic perovskite semiconductor with a stable orthorhombic structure, LaFeO3 combines chemical robustness with a workable band gap for functional oxide thin-film applications. Each target is manufactured to controlled density and grain structure to support consistent, low-particulate deposition.
Lanthanum Ferrite LaFeO3 crystallises in a distorted orthorhombic Pnma/Pbnm perovskite structure, with La3+ occupying the A-site and Fe3+ ions forming corner-sharing FeO6 octahedra. It is a p-type semiconductor with a bandgap of approximately 2.0–2.6 eV and exhibits antiferromagnetic ordering below about 740 K, accompanied by weak ferromagnetism from spin canting. Its oxygen-vacancy and surface-defect chemistry provide strong gas sensitivity. As a sputtering target, LaFeO3 enables stoichiometric, phase-controlled thin-film deposition for gas sensors, solid oxide fuel cell components, photocatalytic coatings, and oxide-electronic or spintronic buffer layers.
Answer: Typical conditions include a substrate temperature of 600-800°C, oxygen/argon gas mixtures, and 5-20 mTorr pressures. These may vary based on film requirements.
Answer: Handle targets with care to avoid chipping. Store them properly in a dry, clean environment to prevent contamination and maintain sputtering performance.
Lanthanum Ferrite LaFeO3 crystallises in a distorted orthorhombic Pnma/Pbnm perovskite structure, with La3+ occupying the A-site and Fe3+ ions forming corner-sharing FeO6 octahedra. It is a p-type semiconductor with a bandgap of approximately 2.0–2.6 eV and exhibits antiferromagnetic ordering below about 740 K, accompanied by weak ferromagnetism from spin canting. Its oxygen-vacancy and surface-defect chemistry provide strong gas sensitivity. As a sputtering target, LaFeO3 enables stoichiometric, phase-controlled thin-film deposition for gas sensors, solid oxide fuel cell components, photocatalytic coatings, and oxide-electronic or spintronic buffer layers.
Key Properties of Lanthanum Ferrite
Property
Value
Significance
Chemical formula
LaFeO3
Defines the fixed 1:1:3 lanthanum-iron-oxygen stoichiometry the target must reproduce in the deposited film
CAS number
12022-43-4
Unique substance identifier used for procurement, safety documentation, and regulatory compliance
Molar mass
~242.75 g/mol
Used to convert sputter yield and deposition rate data into film growth-rate calculations
Density (theoretical)
~6.65 g/cm3
Baseline for calculating target mass, expected lifetime, and achievable film packing density
Melting point
~1,970 C
High thermal stability limits target softening or decomposition under sustained ion bombardment
Crystal structure
Orthorhombic perovskite (distorted, space group Pnma)
Determines grain orientation, sputter yield anisotropy, and the resulting film’s crystallinity and defect density
Band gap
~2.0 – 2.6 eV
Places LaFeO3 in the visible-light-active semiconductor range, underlying its gas-sensing and photocatalytic use
Magnetic ordering
Antiferromagnetic (Neel temp. ~740 K)
Governs magnetic behaviour of the film in spintronic and multiferroic-adjacent thin-film applications
Types & Grades of Lanthanum Ferrite
Lanthanum Ferrite targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
2N (99%)
99%
Cost-effective grade for general-purpose gas-sensing films and process development runs
3N (99.9%)
99.9%
Standard industrial grade for SOFC-related layers, sensor films, and routine photocatalytic coatings
4N (99.99%)
99.99%
Research-grade films where trace-impurity control affects sensor response or catalytic activity
5N (99.999%)
99.999%
Advanced oxide-electronics and spintronic research requiring minimal unintended dopant content
Indium-bonded target
99.9% – 99.99%
Bonded to a copper backing plate to manage the limited thermal shock resistance of the LaFeO3 ceramic
Applications of Lanthanum Ferrite
Sputtered films of Lanthanum Ferrite support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Gas sensors
Chemiresistive thin-film sensing layers
Provides a p-type oxide surface whose resistance shifts measurably on exposure to reducing gases such as ethanol and H2S
Energy (fuel cells)
Solid oxide fuel cell interconnect and interfacial layers
Contributes a chemically and thermally stable perovskite layer compatible with SOFC operating temperatures
Environmental and energy catalysis
Visible-light photocatalytic coatings
Absorbs visible light via its ~2 eV band gap to drive photocatalytic degradation and water-splitting reactions
Oxide electronics and spintronics
Antiferromagnetic buffer and electrode layers
Supplies a magnetically ordered oxide layer for heterostructure and exchange-coupling research
Materials research
Multiferroic and perovskite heterostructure studies
Serves as a well-characterised orthoferrite reference layer in epitaxial thin-film stacks
Catalysis
Oxidation catalyst thin films
Exploits Fe3+/Fe2+ redox activity and oxygen-vacancy chemistry to promote surface oxidation reactions
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lanthanum Ferrite sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Lanthanum Ferrite, LaFeO3
Typical conditions include a substrate temperature of 600-800°C, oxygen/argon gas mixtures, and 5-20 mTorr pressures. These may vary based on film requirements.
Handle targets with care to avoid chipping. Store them properly in a dry, clean environment to prevent contamination and maintain sputtering performance.
Yes, annealing in an oxygen atmosphere is often performed to enhance crystallinity and optimize superconducting or electronic properties.
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