Lanthanum gallate (LaGaO3) sputtering targets from Infinita Materials deliver a high-density, high-purity source material for depositing perovskite-structured oxide films used in solid oxide fuel cell electrolytes, oxide buffer layers, and dielectric coatings. Each target is fabricated to controlled stoichiometry and fine, uniform grain structure to support stable, repeatable sputter rates across long production runs. Standard 1-inch and 2-inch discs are stocked, with custom sizes, shapes, and bonded configurations produced to order.
Lanthanum gallate (LaGaO3) crystallises in a distorted orthorhombic GdFeO3-type perovskite structure (Pbnm), with La3+ occupying the A-site and Ga3+ centred in corner-sharing GaO6 octahedra. Its strong oxide bonding provides good thermal and chemical stability, while its closed-shell ions give it insulating and diamagnetic behaviour. As a sputtering target, LaGaO3 enables controlled deposition of epitaxial or textured perovskite films with precise composition and thickness. Sputtered LaGaO3 is used as a buffer and dielectric layer in oxide heterostructures, superconducting films, and electronics, and as a research material for LSGM-based solid oxide fuel cell electrolyte systems.
Answer: Lanthanum Gallate (LaGaO₃) is commonly used as a sputtering target for fabricating thin films in applications such as solid oxide fuel cells, sensors, and electronic devices due to its high ionic conductivity and stable crystal structure.
Answer: LaGaO₃ exhibits excellent thermal stability, high ionic conductivity, and low lattice mismatch with many oxide substrates, making it ideal for high-performance thin film applications.
Answer: Due to its insulating properties and high melting point, both RF (radio frequency) magnetron sputtering and pulsed laser deposition (PLD) are suitable for LaGaO₃.
Answer: LaGaO₃ offers superior ionic conductivity and structural stability compared to other oxide materials, making it preferable for advanced energy and electronic applications.
Answer: Ensure proper handling to avoid moisture contamination, maintain uniform sputtering parameters to prevent target cracking, and use compatible substrates to achieve optimal film quality.
Lanthanum gallate (LaGaO3) crystallises in a distorted orthorhombic GdFeO3-type perovskite structure (Pbnm), with La3+ occupying the A-site and Ga3+ centred in corner-sharing GaO6 octahedra. Its strong oxide bonding provides good thermal and chemical stability, while its closed-shell ions give it insulating and diamagnetic behaviour. As a sputtering target, LaGaO3 enables controlled deposition of epitaxial or textured perovskite films with precise composition and thickness. Sputtered LaGaO3 is used as a buffer and dielectric layer in oxide heterostructures, superconducting films, and electronics, and as a research material for LSGM-based solid oxide fuel cell electrolyte systems.
Key Properties of Lanthanum Gallate
Property
Value
Significance
Chemical Formula
LaGaO3
Defines the stoichiometric ABO3 perovskite composition of the deposited film
Crystal Structure
Orthorhombic perovskite, GdFeO3-type (space group Pbnm)
Governs octahedral tilting and lattice matching to related oxide substrates
Molar Mass
~256.63 g/mol
Used in stoichiometry, deposition-rate, and film-thickness calculations
Density
~6.93 g/cm3
Determines sputter yield and the mass-to-thickness relationship of deposited films
Melting Point
~1,700 C
Indicates high thermal stability of the target under sustained plasma heat load
Thermal Conductivity
~5.6 W/(m*K)
Informs cooling and power-ramp requirements to avoid thermal shock cracking
Magnetic Type
Diamagnetic
Compatible with magnetron field lines; no magnetic disruption of the sputtering plasma
Electronic Character
Wide-bandgap insulator
Favours RF or pulsed-DC magnetron sputtering over conventional DC sputtering
Types & Grades of Lanthanum Gallate
Lanthanum Gallate targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
Grade / Form
Typical Purity
Key Features / Uses
Standard sputtering disc
99.9%
General-purpose discs for buffer-layer and dielectric thin-film deposition
High-purity electronic grade
99.95% – 99.99%
Low trace-metal content for microelectronic and precision dielectric films
LSGM-precursor grade
99.9%
Stoichiometry-controlled base composition feeding Sr/Mg-doped SOFC electrolyte research
Research and custom-shape grade
99.9% – 99.99%
Small-batch discs, wafers, and non-standard shapes for laboratory sputtering systems
Bonded target assembly
99.9%
Target diffusion- or solder-bonded to a copper backing plate for high-power magnetron systems
Applications of Lanthanum Gallate
Sputtered films of Lanthanum Gallate support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
Industry
Application
Function
Solid oxide fuel cells
LSGM electrolyte thin-film research
Serves as the base perovskite composition for Sr/Mg-doped oxygen-ion conducting electrolyte films
Superconducting electronics
Buffer layers on coated conductors
Provides a lattice-matched insulating layer that reduces mismatch to high-temperature superconducting oxide films
Optical coatings
High-index dielectric films
Delivers a stable, wide-bandgap transparent layer for optical multilayer stacks
Semiconductor and microelectronics
High-k dielectric and isolation layers
Provides insulating oxide layers within multilayer functional-oxide device stacks
Oxide heteroepitaxy research
Template and buffer layers
Enables lattice-matched growth of complex functional oxide films on dissimilar substrates
Gas sensing
Oxide electrolyte films for oxygen sensors
Exploits the ionic conductivity of gallate-based perovskite films at elevated temperature
Why Partner with Infinita Materials?
Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lanthanum Gallate sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Other Related Product to Lanthanum Gallate, LaGaO3
Lanthanum Gallate (LaGaO₃) is commonly used as a sputtering target for fabricating thin films in applications such as solid oxide fuel cells, sensors, and electronic devices due to its high ionic conductivity and stable crystal structure.
LaGaO₃ exhibits excellent thermal stability, high ionic conductivity, and low lattice mismatch with many oxide substrates, making it ideal for high-performance thin film applications.
Due to its insulating properties and high melting point, both RF (radio frequency) magnetron sputtering and pulsed laser deposition (PLD) are suitable for LaGaO₃.
LaGaO₃ offers superior ionic conductivity and structural stability compared to other oxide materials, making it preferable for advanced energy and electronic applications.
Ensure proper handling to avoid moisture contamination, maintain uniform sputtering parameters to prevent target cracking, and use compatible substrates to achieve optimal film quality.
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