| Catalogue Code | IN-GaLa-01 IN-GaLa-02 |
| CAS No. | 165900-07-2 |
| Chemical Formula | LaGaO3 |
| Compound Name | Lanthanum Gallate |
| Purity (%) | >99.9 |
| Dimensions | Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25” |
Introduction
Lanthanum Gallate (LaGaO₃) is a ceramic material widely recognized for its excellent ionic conductivity and structural stability. These characteristics make it an advanced material for thin-film deposition using sputtering techniques. As a sputtering target, LaGaO₃ offers high purity, chemical stability, and compatibility with various deposition environments. It is precious in applications requiring high-performance thin films in energy, electronics, and advanced optics.
Properties
The table below contains all the critical properties of lanthanum gallate:
| Properties | Description |
| Appearance and Shape | Solid, Thin film, Disc |
| Molar mass | ~ 209.76 g/mol |
| Magnetic Type | Diamagnetic |
| Density | ~ 6.71 g/cm³ |
| Thermal conductivity | ~ 5.6 W/(m·K) |
| Melting Point | ~1,700°C |
Applications
Lanthanum gallate has many applications, including:
- Fuel cell cathodes: Lanthanum gallate doped with strontium and magnesium (LSGM) is a solid material used in fuel cell cathodes. It has good thermal expansion, electrical conductivity, and long-term stability.
- Optical Coatings: Enables the creation of transparent, stable coatings for advanced optical devices.
- Fuel cells: Lanthanum gallate-based ceramics can be electrolytes in solid oxide fuel cells (SOFCs) at intermediate temperatures.
- Additive manufacturing: Lanthanum gallate can be used in 3D printing and other additive manufacturing applications.
- Energy Storage Systems: Serves in thin-film batteries and energy storage layers for better ion transport and durability
- Electronics: Lanthanum gallate can be used as an electronic substrate for high-temperature superconducting films.
FAQs
Answere: Lanthanum Gallate (LaGaO₃) is commonly used as a sputtering target for fabricating thin films in applications such as solid oxide fuel cells, sensors, and electronic devices due to its high ionic conductivity and stable crystal structure.
Answere: LaGaO₃ exhibits excellent thermal stability, high ionic conductivity, and low lattice mismatch with many oxide substrates, making it ideal for high-performance thin film applications.
Answere: Due to its insulating properties and high melting point, both RF (radio frequency) magnetron sputtering and pulsed laser deposition (PLD) are suitable for LaGaO₃.
Answere: LaGaO₃ offers superior ionic conductivity and structural stability compared to other oxide materials, making it preferable for advanced energy and electronic applications.
Answere: Ensure proper handling to avoid moisture contamination, maintain uniform sputtering parameters to prevent target cracking, and use compatible substrates to achieve optimal film quality.
sachin
Nice product !!!