| Catalogue Code | IN-LaV-01 IN-LaV-02 |
| CAS No. | 12142-65-3 |
| Compound Name | Lanthanum Vanadium Oxide |
| Purity (%) | >99.9 |
| Dimensions | Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25” |
Introduction
Lanthanum vanadium oxide (LaVO3) sputtering target is a specially made ceramic material majorly applied for thin-film deposition processes to produce high-quality coatings on varied substrates. Using sputtering, a process where energetic ions are bombarded onto the target material to release atoms, the LaVO3 target facilitates controlled, uniform deposition of thin films with excellent adhesion and high purity. Due to its strong correlation between charge, spin, and orbital degrees of freedom, LaVO3 is utilized in advanced electronic devices and thin-film deposition processes.
Properties
The table below contains all the critical properties of Lanthanum Vanadium Oxide:
| Properties | Description |
| Appearance and Shape | Solid, Thin film, Disc |
| Molar mass | ~ 237.85 g/mol |
| Magnetic Type | Antiferromagnetic |
| Thermal conductivity | ~ 3–5 W/m·K |
| Melting Point | ~ 2353 K |
Application
LaVO3 has many applications, including:
- Thin-Film Transistors: LaVO3 is used in electronics and thin-film transistors because of its conducting and semiconducting properties.
- Catalysis: LaVO3 is applicable in oxidation and reduction reactions, which enhance the efficiency of environmental remediation and chemical synthesis.
- Photovoltaic Cells: LaVO3, a photovoltaic and solar cell material, allows for energy extraction since its unique optical properties promote better light absorption and energy transformation.
- Energy Storage: LaVO3 contributes to achieving high energy density and cycling stability for lithium-ion batteries and supercapacitors.
- Spintronic Devices: Due to its interesting magnetic and electronic interactions, LaVO3 is researched for spintronics, a technology aimed at data storage and magneto-resistive devices.
FAQs
Answere: LaVO3 is a lanthanum, vanadium, and oxygen compound often used as a sputtering target in thin-film deposition processes.
Answere: Due to their high dielectric constant and perovskite structure, LaVO3 targets are primarily used to fabricate thin films for devices such as capacitors, sensors, transistors, and advanced memory systems.
Answere: It has excellent thermal stability and high resistivity and can be quickly deposited as a thin film with consistent stoichiometry, making it suitable for precise and high-performance electronic devices.
Answere: The sputtering process involves bombarding a LaVO3 target with high-energy ions, causing the material to eject atoms. These atoms are then deposited onto a substrate to form thin films with desired properties.
Answere: LaVO3 targets should be stored in a cool, dry place, avoiding exposure to moisture and harsh environments that may affect their quality. Handling should be done with care to prevent contamination or physical damage.
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