Lanthanum Vanadium Oxide
Lanthanum vanadium oxide (LaVO3) sputtering targets from Infinita Materials supply a strongly correlated perovskite oxide in which charge, spin, and orbital degrees of freedom interact, making it a key material for Mott-insulator thin-film research and functional oxide device stacks. Supplied as precision-sintered ceramic discs in standard 1 in and 2 in diameters, each target is manufactured to controlled La: V:O stoichiometry to support stable, uniform film growth by RF and pulsed-DC magnetron sputtering.
| Purity (%) : | >99.9 |
| Dimensions : | Dia. 1”, Thick. 0.125” Dia. 2”, Thick. 0.25” |
Introduction to Lanthanum Vanadium Oxide
Lanthanum vanadium oxide (LaVO₃) is an orthorhombic GdFeO₃-type perovskite (Pbnm/Pnma) containing La³⁺ on the A-site and V³⁺ within corner-sharing VO₆ octahedra. It is a correlated Mott insulator with an approximately 1.1 eV insulating gap and antiferromagnetic order coupled to orbital ordering, making precise oxygen and cation stoichiometry critical for reproducible properties. Sputtering from dense ceramic LaVO₃ targets enables controlled composition, uniform thickness, and epitaxial thin-film growth on substrates such as SrTiO₃ and LaAlO₃. These films are investigated for correlated-electron and spintronic heterostructures, oxide photovoltaics, catalytic coatings, and energy-storage electrodes where controlled electronic and interfacial properties are essential.
FAQs
Question: Why is LaVO3 preferred for sputtering?
Answer: It has excellent thermal stability and high resistivity and can be quickly deposited as a thin film with consistent stoichiometry, making it suitable for precise and high-performance electronic devices.
Question: What is the sputtering process for LaVO3?
Answer: The sputtering process involves bombarding a LaVO3 target with high-energy ions, causing the material to eject atoms. These atoms are then deposited onto a substrate to form thin films with desired properties.
Introduction to Lanthanum Vanadium Oxide
Lanthanum vanadium oxide (LaVO₃) is an orthorhombic GdFeO₃-type perovskite (Pbnm/Pnma) containing La³⁺ on the A-site and V³⁺ within corner-sharing VO₆ octahedra. It is a correlated Mott insulator with an approximately 1.1 eV insulating gap and antiferromagnetic order coupled to orbital ordering, making precise oxygen and cation stoichiometry critical for reproducible properties. Sputtering from dense ceramic LaVO₃ targets enables controlled composition, uniform thickness, and epitaxial thin-film growth on substrates such as SrTiO₃ and LaAlO₃. These films are investigated for correlated-electron and spintronic heterostructures, oxide photovoltaics, catalytic coatings, and energy-storage electrodes where controlled electronic and interfacial properties are essential.
Key Properties of Lanthanum Vanadium Oxide
| Property | Value | Significance |
|---|
| Chemical formula | LaVO3 | Defines the 1:1:3 La: V:O stoichiometry that sets the perovskite structure and Mott-insulating behaviour of the film |
| CAS number | 12142-65-3 | Unique registry identifier for procurement, customs, and safety documentation; distinct from CAS 13939-40-7, which refers to lanthanum vanadium tetraoxide (LaVO4) |
| Molar mass | ~237.85 g/mol | Basis for stoichiometric batching calculations and target mass-to-composition conversions |
| Crystal structure | Orthorhombic perovskite (Pbnm/Pnma), pseudocubic a ~3.92 A | Governs epitaxial compatibility with SrTiO3, LaAlO3, and related perovskite substrates |
| Density (calculated) | ~6.5 g/cm3 | Reference value for evaluating sintered target relative density and calibrating deposition-rate and film-thickness monitors |
| Melting point | ~2353 K (~2080 C) | Sets upper thermal processing limits and confirms suitability for high-temperature sintering and PVD source use |
| Magnetic/electronic behaviour | Antiferromagnetic Mott insulator, bandgap ~1.1 eV | Relevant for spintronic device layers and correlated-electron physics research using sputtered films |
| Thermal conductivity | ~3-5 W/m-K | Affects heat dissipation across the target during high-power magnetron sputtering and influences achievable deposition rates |
Types & Grades of Lanthanum Vanadium Oxide
Lanthanum Vanadium Oxide targets are offered in standard catalogue sizes and grades, with custom purity, density, and geometry available for OEM and R&D deposition systems.
| Grade / Form | Typical Purity | Key Features / Uses |
|---|
| Standard planar disc target | 99.9% (3N) | General-purpose RF and pulsed-DC sputtering for catalytic, photovoltaic, and baseline research films |
| High-purity target | 99.99% (4N) | Reduced trace-metal contamination for spintronic and correlated-electron device layers sensitive to unintended doping |
| Ultra-high-purity target | 99.999% (5N) | Minimal defect density and trap states for semiconductor-grade epitaxial thin-film research |
| Bonded target (indium or copper-backed) | 99.9% and above | Configured for high-power magnetron systems requiring enhanced thermal contact with the backing plate |
| Custom or segmented target | 99.9% – 99.999% | Disc, plate, column, or step-target geometries produced to order for large-area or specialised deposition tools |
Applications of Lanthanum Vanadium Oxide
Sputtered films of Lanthanum Vanadium Oxide support demanding roles across research and production applications where this material’s specific structural, electronic, or optical properties are the key requirement.
| Industry | Application | Function |
|---|
| Semiconductor/electronics | Thin-film transistor channel and buffer layers | Provides a Mott-insulating oxide layer with correlation-driven, tunable electronic behaviour |
| Renewable energy | Perovskite-oxide photovoltaic cell research | Serves as a light-absorbing and charge-transport oxide layer in experimental solar cell architectures |
| Energy storage | Battery and supercapacitor electrode research | Vanadium redox activity supports lithium- and sodium-ion intercalation studies in thin-film electrodes. |
| Spintronics and quantum materials | Correlated-oxide heterostructures and antiferromagnetic spintronic layers | Supplies a strongly correlated, antiferromagnetically ordered film for spin-orbit and orbital-ordering research |
| Catalysis | Heterogeneous catalytic thin-film coatings | Mixed La-V-O surface chemistry promotes redox-active catalytic sites |
| Academic and materials research | Epitaxial thin-film growth for Mott-physics studies | Model correlated perovskite for fundamental charge-spin-orbital coupling research |
Why Partner with Infinita Materials?
- Technical Depth: in-house quality control with ICP-MS and XRF purity verification, density measurement, and full certificates of analysis on every target.
- Global Logistics: reliable supply from single R&D-scale targets to production-line volumes, with established international shipping.
- Responsive Support: direct access to materials engineers for grade, bonding, and geometry selection, and process-compatibility questions.
Take the Next Step
Infinita Materials fabricates Lanthanum Vanadium Oxide sputtering targets engineered to the purity, density, and geometry your deposition process requires. Whether the requirement is a standard catalogue target or a custom size, purity, or bonded assembly, our team can help match the right specification to your deposition system. Request a quote or speak with our technical team to discuss your target specification.
Frequently Asked Questions
Why is LaVO3 preferred for sputtering?
It has excellent thermal stability and high resistivity and can be quickly deposited as a thin film with consistent stoichiometry, making it suitable for precise and high-performance electronic devices.
What is the sputtering process for LaVO3?
The sputtering process involves bombarding a LaVO3 target with high-energy ions, causing the material to eject atoms. These atoms are then deposited onto a substrate to form thin films with desired properties.
Lanthanum Vanadium Oxide
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